CY62148BLL-70SC Cypress Semiconductor Corp, CY62148BLL-70SC Datasheet - Page 5

• Manufacturer Part Number: CY62148BLL-70SC
• Description: IC SRAM 4MBIT 70NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62148BLL-70SC

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (512K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOIC (11.30mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1075

Document #: 38-05039 Rev. *C
Data Retention Characteristics
Data Retention Waveform
Switching Waveforms
V
I
t
t
Read Cycle No.1
Read Cycle No. 2 (OE Controlled)
Notes:
CCDR
CDR
R
10. Device is continuously selected. OE, CE = V
12. Address valid prior to or coincident with CE transition LOW.
DATA OUT
11. WE is HIGH for read cycle.
9. Full Device operatin requires linear V
DR
[9]
DATA OUT
CURRENT
ADDRESS
ADDRESS
Parameter
SUPPLY
[4]
V
CE
V
CE
OE
CC
CC
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
[10, 11]
CC
for Data Retention
HIGH IMPEDANCE
t
PU
PREVIOUS DATA VALID
t
LZCE
CC
Description
ramp from V
[11, 12]
t
t
ACE
LZOE
IL
.
(Over the Operating Range)
t
OHA
50%
t
CDR
t
DOE
3.0V
DR
Com’l LL
Ind’l
to V
t
CC(min)
AA
LL
> 100 µs or stable at V
t
RC
DATA RETENTION MODE
No input may exceed
V
V
CE > V
V
V
CC
CC
IN
IN
t
> V
< 0.3V
RC
= V
V
Conditions
+ 0.3V
DR
CC
CC
DR
> 2V
– 0.3V
– 0.3V or
= 3.0V
cc(min)
DATA VALID
> 100 µs.
Min.
2.0
t
RC
0
t
DATA VALID
CY62148B MoBL™
HZOE
3.0V
Typ.
t
R
t
HZCE
[3]
t
PD
50%
Max.
20
20
IMPEDANCE
Page 5 of 11
HIGH
Unit
µA
µA
ns
ns
V
I
SB