CY7C1019CV33-12VC Cypress Semiconductor Corp, CY7C1019CV33-12VC Datasheet - Page 4

• Manufacturer Part Number: CY7C1019CV33-12VC
• Description: IC SRAM 1MBIT 12NS 32SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1019CV33-12VC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1476

Document #: 38-05130 Rev. *D
Switching Waveforms
Read Cycle No. 1
Read Cycle No. 2 (OE Controlled)
Write Cycle No. 1 (CE Controlled)
Notes:
11. Device is continuously selected. OE, CE = V
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
14. Data I/O is high impedance if OE = V
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
DATA OUT
ADDRESS
CURRENT
ADDRESS
DATA OUT
DATA I/O
ADDRESS
SUPPLY
CE
CE
V
WE
OE
CC
[11, 12]
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
t
LZCE
IH
.
[12, 13]
[14, 15]
t
t
ACE
LZOE
IL
.
t
SA
50%
t
OHA
t
DOE
t
AA
t
AW
t
RC
t
WC
t
PWE
t
RC
DATA VALID
t
SCE
t
t
SD
SCE
DATA VALID
t
HD
t
HZOE
DATA VALID
t
HA
t
HZCE
CY7C1019CV33
t
PD
50%
IMPEDANCE
HIGH
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