PSD813F1A-90JI STMicroelectronics, PSD813F1A-90JI Datasheet - Page 29
![IC FLASH 1MBIT 90NS 52PLCC](/photos/7/24/72493/497-52-plcc_series_sml.jpg)
PSD813F1A-90JI
Manufacturer Part Number
PSD813F1A-90JI
Description
IC FLASH 1MBIT 90NS 52PLCC
Manufacturer
STMicroelectronics
Datasheet
1.PSD813F1A-90U.pdf
(111 pages)
Specifications of PSD813F1A-90JI
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
90ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-1976-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSD813F1A-90JI
Manufacturer:
WSI
Quantity:
10
Company:
Part Number:
PSD813F1A-90JI
Manufacturer:
STMicroelectronics
Quantity:
10 000
ERASING FLASH MEMORY
Flash Bulk Erase
The Flash Bulk Erase instruction uses six write op-
erations followed by a Read operation of the status
register, as described in
byte of the Bulk Erase instruction is wrong, the
Bulk Erase instruction aborts and the device is re-
set to the Read Flash memory status.
During a Bulk Erase, the memory status may be
checked by reading status bits DQ5, DQ6, and
DQ7, as detailed in section entitled
MING FLASH MEMORY, page
(DQ5) returns a ‘1’ if there has been an Erase Fail-
ure (maximum number of erase cycles have been
executed).
It is not necessary to program the array with 00h
because the PSD will automatically do this before
erasing to 0FFh.
During execution of the Bulk Erase instruction, the
Flash memory will not accept any instructions.
Flash Sector Erase. The Sector Erase instruc-
tion uses six write operations, as described in
ble 8., page
confirm commands and Flash sector addresses
can be written subsequently to erase other Flash
sectors in parallel, without further coded cycles, if
the additional instruction is transmitted in a shorter
time than the timeout period of about 100 µs. The
input of a new Sector Erase instruction will restart
the time-out period.
The status of the internal timer can be monitored
through the level of DQ3 (Erase time-out bit). If
DQ3 is ‘0’, the Sector Erase instruction has been
received and the timeout is counting. If DQ3 is ‘1’,
the timeout has expired and the PSD is busy eras-
ing the Flash sector(s). Before and during Erase
timeout, any instruction other than Erase suspend
and Erase Resume will abort the instruction and
reset the device to READ mode. It is not neces-
sary to program the Flash sector with 00h as the
PSD will do this automatically before erasing
(byte=FFh).
During a Sector Erase, the memory status may be
checked by reading status bits DQ5, DQ6, and
DQ7, as detailed in section entitled
MING FLASH MEMORY, page
During execution of the erase instruction, the
Flash block logic accepts only Reset and Erase
20. Additional Flash Sector Erase
Table 8., page
27.
27. The Error bit
PROGRAM-
PROGRAM-
20. If any
Ta-
Suspend instructions. Erasure of one Flash sector
may be suspended, in order to read data from an-
other Flash sector, and then resumed.
Flash Erase Suspend
When a Flash Sector Erase operation is in prog-
ress, the Erase Suspend instruction will suspend
the operation by writing 0B0h to any address when
an appropriate Chip Select (FSi) is true. (See
ble 8., page
another Flash sector after the Erase operation has
been suspended. Erase suspend is accepted only
during the Flash Sector Erase instruction execu-
tion and defaults to READ mode. An Erase Sus-
pend instruction executed during an Erase timeout
will, in addition to suspending the erase, terminate
the time out.
The Toggle Bit DQ6 stops toggling when the PSD
internal logic is suspended. The toggle Bit status
must be monitored at an address within the Flash
sector being erased. The Toggle Bit will stop tog-
gling between 0.1 µs and 15 µs after the Erase
Suspend instruction has been executed. The PSD
will then automatically be set to Read Flash Block
Memory Array mode.
If an Erase Suspend instruction was executed, the
following rules apply:
■
■
■
■
Flash Erase Resume
If an Erase Suspend instruction was previously ex-
ecuted, the erase operation may be resumed by
this instruction. The Erase Resume instruction
consists of writing 030h to any address while an
appropriate Chip Select (FSi) is true. (See
8., page
Attempting to read from a Flash sector that
was being erased will output invalid data.
Reading from a Flash sector that was not
being erased is valid.
The Flash memory cannot be programmed,
and will only respond to Erase Resume and
Reset instructions (READ is an operation and
is OK).
If a Reset instruction is received, data in the
Flash sector that was being erased will be
invalid.
20.)
20). This allows reading of data from
PSD813F1A
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Table
Ta-