CY7C199C-20ZI Cypress Semiconductor Corp, CY7C199C-20ZI Datasheet - Page 5

• Manufacturer Part Number: CY7C199C-20ZI
• Description: IC SRAM 256KBIT 20NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-20ZI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1574

Document #: 38-05408 Rev. *A
Capacitance
AC Test Loads
C
C
Notes:
I
I
I
I
I
CC
SB1
SB2
OZ
IX
IN
OUT
Parameter
Parameter
4. Tested initially and after any design or process change that may affect these parameters.
Output
Thevenin Equivalent
4
V
V
Supply Current
Automatic CE
Power–down
Current TTL Inputs
Automatic CE
Power–down
Current CMOS
Inputs
Output Leakage
Current
Input Load Current
CC
Input Capacitance
Output Capacitance
CC
Description
Operating
R
Description
Output Loads
th
C1
(A)*
V
R1
T
V
1/t
Max. V
Max. V
V
GND
GND
T
V
CC
CC
V
A
R2
CC
RC
IL
= 25C, f = 1 MHz,
= Max., I
– 0.3V, or V
, f = F
* including scope and jig capacitance
Conditions
= 5.0V
CC
CC
V
V
Vi
Vi
CC
SS
, CE V
, CE
MAX
V
V
Condition
OUT
CC
CC
10%
, Output Disabled
IN
V
= 0 mA, f = F
IH
CC
, V
Rise Time
0.3V, f = 0
– 0.3V, V
IN
1 V/ns
90%
V
IH
or V
MAX
IN
IN
=
All Input Pulses
Output
Power
ALL – PACKAGES
V
CC
–
–
L
–
L
–
–
for t
Max
Output Loads
HZOE
8
8
Min
C2
–5
–5
–
–
–
–
–
, t
20 ns
(B)*
HZCE
Max
500
& t
75
30
10
10
+5
+5
R3
HZWE
Fall Time
1 V/ns
90%
Min
–5
–5
–
–
–
–
–
CY7C199C
25 ns
R4
Max
500
Page 5 of 12
75
30
10
10
+5
+5
10%
Unit
mA
mA
mA
mA
uA
uA
uA
Unit
pF