CY7C199C-20ZI Cypress Semiconductor Corp, CY7C199C-20ZI Datasheet - Page 6

• Manufacturer Part Number: CY7C199C-20ZI
• Description: IC SRAM 256KBIT 20NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-20ZI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1574

Document #: 38-05408 Rev. *A
AC Test Conditions
Thermal Resistance
AC Electrical Characteristics
C1
C2
R1
R2
R3
R4
R
V
Notes:
Parameter
Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Parameter
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
TH
TH
5. Test Conditions assume a transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
6. At any given temperature and voltage condition, t
7. The internal write time of the memory is defined by the overlap of
CE LOW and WE LOW. CE and WE must be LOW to initiate a
write, and the transition of any of these signals can terminate the
write. The input data set–up and hold timing should be referenced
to the leading edge of the signal that terminates the write.
8. t
Loads. Transitions are measured ± 200 mV from steady state volt-
age.
JC
JA
HZOE
, t
HZCE
Capacitor 1
Capacitor 2
Resistor 1
Resistor 2
Resistor 3
Resistor 4
Resistor Thevenin
Voltage Thevenin
Thermal Resistance
(Junction to
Ambient)
Thermal Resistance
(Junction to Case)
Read Cycle Time
Address to Data Valid
Data Hold from Address
Change
CE to Data Valid
OE to Data Valid
OE to Low Z
OE to High Z
CE to Low Z
CE to High Z
CE to Power–Up
CE to Power–Down
Write Cycle Time
CE to Write End
Address Set–Up to Write
End
Address Hold from Write
End
, t
HZWE
Description
Description
are specified as in part (b) of the A/C Test
Description
5
Still Air, soldered on a
3 × 4.5 square inch,
two–layer printed
circuit board
6 7 8
Conditions
HZCE
Min
12
12
–
3
–
–
0
–
3
–
0
–
9
9
0
is less than t
12 ns
Max
12
12
12
–
–
5
–
5
–
5
–
–
–
–
–
LZCE
, t
HZOE
TSOP I
Min
21.94
88.6
15
15
10
10
–
3
–
–
0
–
3
–
0
–
0
is less than t
15 ns
Nom.
Max
1.73
480
255
480
255
167
15
15
15
30
–
–
7
–
7
–
7
–
–
–
–
–
5
LZOE
, and t
Min
41.42
SOJ
20
20
15
15
–
3
–
–
0
–
3
–
0
–
0
79
HZWE
20 ns
is less than t
Max
20
20
20
–
–
9
–
9
–
9
–
–
–
–
–
LZWE
Min
TBD
TBD
25
25
15
15
DIP
–
3
–
–
0
–
3
–
0
–
0
for any given device.
25 ns
CY7C199C
Max
25
25
20
Page 6 of 12
–
–
9
–
9
–
9
–
–
–
–
–
°C/W
Unit
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
V