CY7C199C-20ZI Cypress Semiconductor Corp, CY7C199C-20ZI Datasheet - Page 7

• Manufacturer Part Number: CY7C199C-20ZI
• Description: IC SRAM 256KBIT 20NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-20ZI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1574

Document #: 38-05408 Rev. *A
Data Retention Characteristics
Timing Waveforms
Data Retention Waveform
Read Cycle No. 1
V
I
t
t
Notes:
Parameter
CCDR
CDR
R
t
t
t
t
t
t
Parameter
SA
PWE
SD
HD
HZWE
LZWE
DR
Address
Data Out
9. L–version only.
10. Device is continuously selected. OE = V
11. WE is HIGH for Read Cycle.
CE
V
CC
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Address Set–Up to Write
Start
WE Pulse Width
Data Set–Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
CC
for Data Retention
Description
Description
10 11
Previous Data Valid
t
CDR
IL
9
= CE.
V
V
CC
CC
Min
t
OHA
0
8
8
0
–
3
= V
– 0.3V or V
12 ns
DR
DATA RETENTION MODE
t
=2.0V, CE
AA
Max
–
–
–
–
7
–
IN
Condition
0.3V
Min
0
9
9
0
–
3
V
15 ns
CC
t
RC
– 0.3V, V
Max
–
–
–
–
7
–
IN
Min
15
10
0
0
–
3
20 ns
Max
10
Min
200
–
–
–
–
–
2.0
–
0
Data Valid
t
R
ALL
Min
15
10
0
0
–
3
25 ns
CY7C199C
Max
150
–
–
–
Max
10
Page 7 of 12
–
–
–
–
–
Unit
Unit
ns
ns
ns
ns
ns
ns
uA
ns
us
V