CY7C199C-20ZI Cypress Semiconductor Corp, CY7C199C-20ZI Datasheet - Page 9

• Manufacturer Part Number: CY7C199C-20ZI
• Description: IC SRAM 256KBIT 20NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-20ZI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1574

Document #: 38-05408 Rev. *A
Write Cycle No. 2
Write Cycle No. 3
Notes:
Data In/Out
Address
17. This cycle is CE controlled.
18. Data In/Out is high impedance if OE = V
19. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high–impedance state.
20. The cycle is WE controlled, OE low. The minimum write cycle time is the sum of t
Address
WE
In/Out
CE
Data
CE
WE
(CE Controlled) 17 18 19
High Z
(WE Controlled, OE Low) 20
Undefined
see footnotes
t
SA
IH
.
t
SA
t
HZWE
t
AW
t
SCE
t
t
AW
WC
t
PWE
HZWE
t
WC
Data-In Valid
t
SD
and t
t
SCE
Data-In Valid
t
SD
SD
.
t
HD
t
LZWE
t
t
t
HA
HD
HA
CY7C199C
See Footnotes
Undefined
High Z
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