NAND256W4A0AN6E STMicroelectronics, NAND256W4A0AN6E Datasheet - Page 18
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NAND256W4A0AN6E
Manufacturer Part Number
NAND256W4A0AN6E
Description
IC FLASH 256MBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND128W3A2BN6E.pdf
(56 pages)
Specifications of NAND256W4A0AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (16Mx16)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
497-3614
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 6. Address Insertion, x8 Devices
Note: 1. A8 is set Low or High by the 00h or 01h Command, see
Table 7. Address Insertion, x16 Devices
Note: 1. A8 is Don’t Care in x16 devices.
Table 8. Address Definitions
18/56
Bus Cycle
Cycle
4
Bus
4
2
3
1
th(4)
2
3
1
th(4)
nd
rd
2. Any additional address input cycles will be ignored.
3. The 4th cycle is only required for 512Mb and 1Gb devices.
st
2. Any additional address input cycles will be ignored.
3. The 01h Command is not used in x16 devices.
4. The 4th cycle is only required for 512Mb and 1Gb devices.
nd
rd
st
I/O15
I/O8-
X
X
X
X
I/O7
A16
A24
V
A7
IL
A14 - A26
Address
A9 - A26
A9 - A13
A0 - A7
I/O7
A16
A24
A8
V
A7
IL
I/O6
A15
A23
V
A6
IL
I/O6
A15
A23
A6
V
IL
I/O5
A14
A22
V
A5
IL
I/O5
A14
A22
V
A5
IL
Pointer Operations
I/O4
A13
A21
V
A4
IL
A8 is set Low or High by the 00h or 01h Command, and is
I/O4
A13
A21
V
A4
IL
I/O3
A12
A20
V
A3
IL
section.
I/O3
A12
A20
V
A3
Don’t Care in x16 devices
IL
Column Address
Address in Block
Block Address
Page Address
Definition
I/O2
A11
A19
V
A2
IL
I/O2
A19
A11
V
A2
IL
I/O1
A10
A18
A26
A1
I/O1
A10
A18
A26
A1
I/O0
A17
A25
I/O0
A17
A25
A0
A9
A0
A9