CY7C1338G-117AXC Cypress Semiconductor Corp, CY7C1338G-117AXC Datasheet - Page 8

• Manufacturer Part Number: CY7C1338G-117AXC
• Description: IC SRAM 4MBIT 117MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1338G-117AXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 117MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05521 Rev. *A
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to V
DC Input Voltage....................................–0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
I
Shaded areas contain advance information.
Notes:
Parameter
X
OZ
OS
DD
SB1
SB2
SB3
SB4
8. Overshoot: V
9.
DD
DDQ
OH
OL
IH
IL
TPower-up
: Assumes a linear ramp from 0v to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current (except ZZ and
MODE)
Input Current of MODE
Input Current of ZZ
Output Leakage Current
Output Short Circuit Current
V
Automatic CE Power-Down
Current—TTL Inputs
Automatic CE Power-Down
Current—CMOS Inputs
Automatic CE Power-Down
Current—CMOS Inputs
Automatic CE Power-Down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply Current
DD
DD
Relative to GND........ –0.5V to +4.6V
Description
+1.5V (Pulse width less than t
[8]
Over the Operating Range
DD
(min.) within 200ms. During this time V
CYC
V
V
V
V
V
V
V
V
GND ≤ V
Input = V
Input = V
Input = V
Input = V
GND ≤ V
V
V
f = f
Max. V
V
inputs switching
Max. V
V
f = 0, inputs static
Max. V
V
f = f
Max. V
V
f = 0, inputs static
DDQ
IN
IN
IN
IN
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DD
DD
DD
PRELIMINARY
/2), undershoot: V
MAX
≥ V
≥ V
≥ V
≥ V
MAX
= Max., V
= Max., I
+ 0.5V
+ 0.5V
= 3.3V, V
= 2.5V, V
= 3.3V, V
= 2.5V, V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
DDQ
IH
DD
DD
= 1/t
DD
DD
DD
DD
, inputs switching
I
or V
I
SS
DD
SS
DD
, Device Deselected,
, Device Deselected,
, Device Deselected,
, Device Deselected,
– 0.3V or V
≤ V
– 0.3V or V
≤ V
– 0.3V or V
CYC
OUT
[8, 9]
IN
DD
OUT
DDQ
DD
DD
DD
DD
≤ V
, Output Disabled
= 0 mA,
IL
= GND
= Min., I
= Min., I
= Min., I
= Min., I
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
(AC) > -2V (Pulse width less than t
IL
Commercial
Industrial
Test Conditions
, f = f
IN
Range
IN
IN
≤ 0.3V,
≤ 0.3V,
IH
≤ 0.3V,
MAX
OH
OH
OL
OL
< V
= 8.0 mA
= 1.0 mA
,
= –4.0 mA
= –1.0 mA
DD
and V
7.5-ns cycle, 133 MHz
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
7.5-ns cycle, 133 MHz
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
–40°C to +85°C
Temperature
0°C to +70°C
DDQ
Ambient
< V
DD.
CYC
]
/2).
3.3V −5%/+10% 2.5V –5%
3.135
2.375
Min.
–0.3
–0.3
V
–30
2.4
2.0
2.0
1.7
−5
–5
–5
CY7C1338G
DD
CY7C1338G
V
V
DD
DD
Max.
–300
V
Page 8 of 17
225
220
205
3.6
0.4
0.4
0.8
0.7
30
90
85
80
40
75
70
65
45
+ 0.3V
+ 0.3V
5
5
5
DD
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V