CY7C1480V33-167AXCT Cypress Semiconductor Corp, CY7C1480V33-167AXCT Datasheet - Page 19

• Manufacturer Part Number: CY7C1480V33-167AXCT
• Description: IC SRAM 72MBIT 167MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480V33-167AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 38-05283 Rev. *J
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
12. Overshoot: V
13. Power up: Assumes a linear ramp from 0V to V
DD
DDQ
OH
OL
IH
IL
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DDQ
DD
Relative to GND........ –0.3V to +4.6V
Relative to GND ...... –0.3V to +V
+1.5V (Pulse width less than t
[12]
[12]
Over the Operating Range
For 3.3V IO
For 2.5V IO
For 3.3V IO, I
For 2.5V IO, I
For 3.3V IO, I
For 2.5V IO, I
For 3.3V IO
For 2.5V IO
For 3.3V IO
For 2.5V IO
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
0.3V or V
V
V
f = f
V
V
DD
DD
IN
DD
DD
IN
DD
IN
DD
MAX
≥ V
MAX
≤ 0.3V or V
MAX
≥ V
(min.) within 200 ms. During this time V
= Max, Device Deselected, V
= Max., I
= Max, Device Deselected,
= Max, Device Deselected, or
= Max, Device Deselected,
IH
IH
= 1/t
= 1/t
= 1/t
I
SS
DD
SS
DD
I
IN
CYC
or V
or V
≤ V
≤ V
DDQ
> V
/2). Undershoot: V
CYC
CYC
CYC
OUT
DDQ
DDQ,
OH
OH
OL
OL
IN
IN
+ 0.5V
DDQ
IN
≤ V
≤ V
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
= 0 mA,
> V
Output Disabled
DD
IL
IL
– 0.3V, f = 0
DDQ
, f = 0
[12, 13]
Test Conditions
– 0.3V
IL
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Commercial
Industrial
(AC) > –2V (Pulse width less than t
Range
IN
IH
≤
< V
All speeds
All speeds
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
DD
–40°C to +85°C
and V
Temperature
0°C to +70°C
Ambient
DDQ
< V
DD
.
CYC
/2).
3.3V –5%/+10% 2.5V – 5%
3.135
3.135
2.375
Min.
–0.3
–0.3
CY7C1480V33
CY7C1482V33
CY7C1486V33
–30
2.4
2.0
2.0
1.7
–5
–5
–5
V
DD
V
V
DD
DD
2.625
Max.
V
Page 19 of 31
500
500
450
245
245
245
120
245
245
245
135
3.6
0.4
0.4
0.8
0.7
30
+ 0.3V
+ 0.3V
5
5
5
DD
DD
to V
V
DDQ
+ 0.5V
Unit
DD
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
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