CY7C1480V33-200AXCT Cypress Semiconductor Corp, CY7C1480V33-200AXCT Datasheet - Page 8

• Manufacturer Part Number: CY7C1480V33-200AXCT
• Description: IC SRAM 72MBIT 200MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480V33-200AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 38-05283 Rev. *J
Pin Definitions
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (t
(250 MHz device).
The CY7C1480V33/CY7C1482V33/CY7C1486V33 supports
secondary cache in systems using either a linear or inter-
leaved burst sequence. The interleaved burst order supports
Pentium and i486™ processors. The linear burst sequence is
suited for processors that use a linear burst sequence. The
burst order is user selectable, and is determined by sampling
the MODE input. Accesses can be initiated with either the
Processor Address Strobe (ADSP) or the Controller Address
Strobe (ADSC). Address advancement through the burst
sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE
asynchronous Output Enable (OE) provide easy bank
selection and output tri-state control. ADSP is ignored if CE
is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE
is HIGH. The address presented to the address inputs (A) is
stored into the address advancement logic and the Address
Register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
MODE
TDO
TDI
TMS
TCK
NC
Pin Name
1
, CE
2
, CE
3
are all asserted active, and (3) the write signals
(continued)
Synchronous
Synchronous
Synchronous
JTAG Serial
JTAG Serial
JTAG Serial
JTAG Clock
Input Static
Output
Input
Input
I/O
-
X
) inputs. A Global Write
1
, CE
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to
V
remain static during device operation. Mode Pin has an internal pull up.
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If
the JTAG feature is not used, this pin must be disconnected. This pin is not available
on TQFP packages.
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not used, this pin can be disconnected or connected to V
available on TQFP packages.
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG
feature is not used, this pin can be disconnected or connected to V
available on TQFP packages.
Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must be
connected to V
No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are
address expansion pins and are not internally connected to the die.
DD
2
, CE
or left floating selects interleaved burst sequence. This is a strap pin and must
CO
) is 3.0 ns
3
) and an
SS
. This pin is not available on TQFP packages.
1
1
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 3.0 ns (250-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE
signal. Consecutive single read cycles are supported. After the
SRAM is deselected at clock rise by the chip select and either
ADSP or ADSC signals, its output tri-states immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE
presented to A is loaded into the address register and the
address advancement logic while being delivered to the
memory array. The write signals (GW, BWE, and BW
ADV inputs are ignored during this first cycle.
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the corre-
sponding address location in the memory array. If GW is HIGH,
then the write operation is controlled by BWE and BW
signals.
The CY7C1480V33/CY7C1482V33/CY7C1486V33 provides
byte write capability that is described in the
Read/Write” on page
(BWE) with the selected Byte Write (BW
tively write to only the desired bytes. Bytes not selected during
a Byte Write operation will remain unaltered. A synchronous
self-timed Write mechanism has been provided to simplify the
Write operations.
Because CY7C1480V33/CY7C1482V33/CY7C1486V33 is a
common I/O device, the Output Enable (OE) must be
deasserted HIGH before presenting data to the DQs inputs.
Doing so will tri-state the output drivers. As a safety
1
, CE
Description
2
, CE
3
11. Asserting the Byte Write Enable input
are all asserted active. The address
CY7C1480V33
CY7C1482V33
CY7C1486V33
X
DD
DD
) input, will selec-
. This pin is not
. This pin is not
“Truth Table for
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X
) and
X
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