M29F200BB50N3 STMicroelectronics, M29F200BB50N3 Datasheet - Page 32

• Manufacturer Part Number: M29F200BB50N3
• Description: IC FLASH 2MBIT 50NS 48TSOP
• Manufacturer: STMicroelectronics

Specifications of M29F200BB50N3

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 2M (256K x 8 or 128K x 16)
• Speed: 50ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and ac parameters
Table 14.
1. Sampled only, not 100% tested.
Figure 10. Write ac waveforms, Chip Enable controlled
32/39
Symbol
t
t
EHRL
t
VCHWL
t
t
t
t
t
t
t
t
t
t
EHWH
WLEL
EHDX
GHEL
EHGL
ELEH
DVEH
EHEL
AVAV
AVEL
ELAX
A0-A16/
A–1
W
G
E
DQ0-DQ7/
DQ8-DQ15
V CC
(1)
RB
Write AC Characteristics, Chip Enable Controlled
(T
t
A
t
t
BUSY
t
t
t
t
t
CPH
OEH
Alt
t
t
t
t
VCS
WC
WH
WS
CP
DS
DH
AH
AS
= 0 to 70 °C, –40 to 85 °C or –40 to 125 °C)
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
Chip Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
CC
tVCHWL
High to Write Enable Low
tWLEL
tGHEL
tAVEL
Parameter
tAVAV
VALID
tELEH
tDVEH
tEHRL
VALID
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tELAX
45
45
40
25
20
40
30
50
0
0
0
0
0
0
tEHWH
tEHGL
M29F200BT, M29F200BB
M29F200B
tEHEL
tEHDX
50
50
40
25
20
40
30
50
0
0
0
0
0
0
70 / 90
70
45
30
20
45
30
50
0
0
0
0
0
0
AI01992
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µ
s