CY7C1565V18-400BZI Cypress Semiconductor Corp, CY7C1565V18-400BZI Datasheet - Page 24

• Manufacturer Part Number: CY7C1565V18-400BZI
• Description: IC SRAM 72MBIT 400MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1565V18-400BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (2M x 36)
• Speed: 400MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Read/Write/Deselect Sequence
Notes
Document Number: 001-05384 Rev. *F
31. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1.
32. Outputs are disabled (High-Z) one clock cycle after a NOP.
33. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note
QVLD
applies to the whole diagram.
WPS
RPS
CQ
CQ
D
A
K
K
Q
1
NOP
t KH
t KL
t SA
t SC
A0
READ
2
t HC
t
HA
t CQH
(Read Latency = 2.5 Cycles)
t CYC
[31, 32, 33]
t
CQHCQH
Figure 5. Waveform for 2.5 Cycle Read Latency
A1
WRITE
3
t KHKH
t SD
t QVLD
t HD
t CQOH
D10
A2
READ
4
t
CLZ
t CQOH
D11
t
t
CO
SC
Q00
D12
t
A3
SD
CCQO
WRITE
5
t
HC
Q01
D13
CCQO
t DOH
CY7C1561V18, CY7C1576V18
CY7C1563V18, CY7C1565V18
Q02
D30
t
NOP
6
HD
t
CQD
Q03
D31
DON’T CARE
Q20
D32
7
t CQDOH
Q21
D33
t
QVLD
Q22
UNDEFINED
8
Page 24 of 28
Q23
t CHZ
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