R1LP0408CSP-7LC#B0 Renesas Electronics America, R1LP0408CSP-7LC#B0 Datasheet - Page 8

• Manufacturer Part Number: R1LP0408CSP-7LC#B0
• Description: IC SRAM 4MBIT 70NS 32SOP
• Manufacturer: Renesas Electronics America

Specifications of R1LP0408CSP-7LC#B0

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (512K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -20°C ~ 70°C
• Package / Case: 32-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: R1LP0408CSP7LC#B0

R1LP0408C-C Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Operating current
Average operating current
Standby current
Standby current
Output low voltage
Output high voltage
Notes: 1. Typical values are at V
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Input capacitance
Input/output capacitance
Note:
Rev.2.00, May.26.2004, page 6 of 12
2. Typical values are at V
1. This parameter is sampled and not 100% tested.
−5SC
−7LC
to +70°C
to +40°C
to +25°C
to +70°C
to +40°C
to +25°C
CC
CC
Cin
C
Symbol
= 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
= 5.0 V, Ta = +40°C and specified loading, and not guaranteed.
I/O
Symbol Min Typ
|I
|I
I
I
I
I
I
I
I
I
I
I
V
V
V
CC
CC1
CC2
SB
SB1
SB1
SB1
SB1
SB1
SB1
LI
LO
OL
OH
OH2
|
|
Min















2.4 
2.6 
Typ




1.5*
8*
2*
0.1*

1.0*
0.8*

1.0*
0.8*

1
1
Max
8
10
1
1
2
1
2
1
Max Unit Test conditions
1
1
3
25
5
0.5
8
3
3
16
10
10
0.4


Unit
pF
pF
µA
µA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
Test conditions
Vin = 0 V
V
Vin = V
CS# = V
WE# = V
CS# = V
Others = V
Min. cycle, duty = 100%,
CS# = V
I
Cycle time = 1 µs,
duty = 100%,
I
V
CS# = V
Vin ≥ 0 V, CS# ≥ V
I
I
I
I/O
I/O
OL
OH
OH
I/O
IH
= 0 mA
= 0 mA, CS# ≤ 0.2 V,
= 2.1 mA
= −1.0 mA
= −0.1 mA
≥ V
= 0 V
CC
SS
IH
IL
IL
IH
IL
,
, Others = V
− 0.2 V, V
to V
or OE# = V
or V
IH
/ V
CC
I/O
IL
, I
= V
I/O
CC
IL
= 0 mA
SS
− 0.2 V
≤ 0.2 V
IH
IH
/V
to V
Note
1
1
or
IL
CC