L6565D STMicroelectronics, L6565D Datasheet - Page 11
![IC CTCLR PWM SMPS CM UVLO 8SOIC](/photos/1/38/13851/497-8-soic_sml.jpg)
L6565D
Manufacturer Part Number
L6565D
Description
IC CTCLR PWM SMPS CM UVLO 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.L6565DTR.pdf
(17 pages)
Specifications of L6565D
Mfg Application Notes
25W Converter Using the L6565 AppNote 30 W Adapter with PWM L6565 Controller AppNote 80 W SMPS - L6565/ESBT STC04IE170HV AppNote L6565 Quasi-Resonant Controller AppNote L6565-Based Low Cost SMPS for TV AppNote SMPS for CRT Monitors with the L6565 AppNote STEVAL-TSP001V1 AppNote Wide Input Volt Range SMPS for Metering AppNote
Output Isolation
Isolated
Voltage - Input
10.3 ~ 18 V
Power (watts)
650mW
Operating Temperature
-40°C ~ 150°C
Package / Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
SMD/SMT
Input Voltage
12V
Output Current
200mA
Power Dissipation Pd
650mW
Digital Ic Case Style
SOIC
No. Of Pins
8
Rohs Compliant
Yes
For Use With
497-9051 - BOARD DEMO STC03DE220HV/ L6565497-8227 - BOARD EVAL L6565/STW3N150497-6427 - BOARD EVAL POE STHS4257A/L6565D497-6422 - BOARD EVAL BASED ON L6565497-6415 - BOARD EVAL L6565/STW4N150 BASED497-6414 - BOARD EVAL L6565 EU220V BASED497-6339 - BOARD EVAL SMPS L6565 3PHASE APP497-6255 - BOARD 6W 3PH SMPS METERING ESBT497-5680 - POWER SUPPLY FOR STB US-110V497-5679 - BOARD EVAL 3PHASE W/ESBT 100W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6565D
Manufacturer:
ST
Quantity:
20 000
Part Number:
L6565D013TR
Manufacturer:
ST
Quantity:
20 000
Part Number:
L6565DTR
Manufacturer:
ST
Quantity:
20 000
Error Amplifier Block (see fig. 17b):
The Error Amplifier (E/A) inverting input is used in primary feedback technique to compare a partition of the volt-
age generated by the auxiliary winding with the internal reference, to achieve converter's output voltage regu-
lation (see "Application Ideas", fig. 24). With secondary feedback (typically using a TL431 at the secondary side
and an optocoupler to transfer output voltage information to the primary side through the isolation barrier) the
E/A can be used as an inverting level-shifter to achieve negative feedback and shape the loop gain (see "Ap-
plication Ideas", fig. 23).
The E/A output is used typically for control loop compensation, realized with an RC network connected to the
inverting input. With other secondary feedback techniques, the output is driven directly by an emitter-grounded
optocoupler to modulate the duty cycle (the inverting input will be grounded in that case - see figure 23 in "Ap-
plication Ideas").
Current Comparator, PWM Latch and Hiccup-mode OCP (see fig. 17b):
The current comparator senses the voltage across the current sense resistor (Rs) and, by comparing it with the
programming signal delivered by the feedforward block, determines the exact time when the external MOSFET
is to be switched off. The PWM latch avoids spurious switching of the MOSFET, which might result from the
noise generated ("double-pulse suppression").
A comparator senses the voltage on the current sense input and disables the gate driver if the voltage at the pin
exceeds 2 V. Such anomalous condition is typically generated by a short circuit on the secondary rectifier or on
the secondary winding. To re-enable the driver, first the IC must be turned off and then can be restarted, that is
the Vcc voltage must fall below the UVLO threshold.
When the gate driver is disabled the quiescent current of the IC is unchanged and, since no energy is coming
from the self-supply circuit, the Vcc capacitor will be discharged below the UVLO threshold after some time.
Then the device will initiate a new start-up cycle. In case of failure of the secondary diode the resulting behavior
will be a low-frequency intermittent operation (Hiccup-mode operation), with very low stress on the power circuit.
Gate Driver (see fig. 18):
A totem pole buffer, with 400mA source and sink capability, drives the external MOSFET. It is made up of a
high-side NPN Darlington and a low-side MOSFET. In this way there is no need of an external diode clamp to
prevent the voltage at the gate drive output (pin 7, GD) from being pulled too negative.
An internal pull-down circuit holds the output low when the device is in UVLO conditions, to ensure that the ex-
ternal MOSFET cannot be turned on accidentally (e.g. at power-on).
Figure 18. Gate driver with UVLO pull-down
DRIVER
8
6
GND
Vcc
UVLO
L6565
7
GD
Q
L6565
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