LTC1155CS8 Linear Technology, LTC1155CS8 Datasheet - Page 9

• Manufacturer Part Number: LTC1155CS8
• Description: IC MOSFET DVR HI-SIDE DUAL 8SOIC
• Manufacturer: Linear Technology

Specifications of LTC1155CS8

• Configuration: High-Side
• Input Type: Non-Inverting
• Delay Time: 450µs
• Number Of Configurations: 2
• Number Of Outputs: 2
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Peak: -
• High Side Voltage - Max (bootstrap): -

Overvoltage Protection
The MOSFET and load can be protected against overvolt-
age conditions by using the circuit of Figure 6. The drain
sense function is used to detect an overvoltage condition
and quickly discharge the power MOSFET gate. The 18V
zener diode conducts when the supply voltage exceeds
A
TYPICAL
PPLICATI
5V
100k
Figure 5. Reverse Battery Protection
IN1
GND
A
O
PPLICATI
LTC1155
GND
V
U
S
300
1/4W
ALL COMPONENTS SHOWN ARE SURFACE MOUNT
S
V
S
DS1
= 4.5V TO 18V
I FOR ATIO
C
G1
LMC555
DLY
U
8
1
O
+
U
4
W
S
10 F
25V
+
3
2
6
R
DLY
f
O
= 1Hz
10 F
750k
1.0 F
Dual 2A Autoreset Electronic Fuse
LOAD
1155 F05
1N4148
1N4148
U
R
1/2 SI9956DY
SEN
OUT 1
0.03
100k
18.6V and pulls the drain sense pin 0.6V below the supply
pin voltage.
The supply voltage is limited to 18.6V and the gate drive is
immediately removed from the MOSFET to ensure that it
cannot conduct during the overvoltage period. The gate of
the MOSFET will be latched OFF until the supply transient
is removed and the input turned OFF and ON again.
30k
0.1 F
G1
IN1
DS1
Figure 6. Overvoltage Shutdown and Protection
LTC1155
GND
5V
V
S
IN1
DS2
LTC1155
IN2
G2
GND
V
0.1 F
S
510
GND
30k
V
100k
S
DS1
= 4.5V TO 18V
G1
1/2 SI9956DY
0.03
OUT 2
10k
1155 TA03
18V
1N4148
LTC1155
LOAD
1155 F06
9