LTC1155CS8 Linear Technology, LTC1155CS8 Datasheet
LTC1155CS8
Specifications of LTC1155CS8
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LTC1155CS8 Summary of contents
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... FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” op- eration is required. The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages. , LTC and LT are registered trademarks of Linear Technology Corporation DLY SEN ...
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... Time for V > 200 GATE 12V 1000pF S GATE Time for V > GATE S Time for V > 10V 120 GATE S ORDER PART TOP VIEW NUMBER 8 DS2 LTC1155CS8 7 G2 LTC1155IS8 IN2 S8 PART MARKING 1155 = 150 C/W JA 1155I = LTC1155M LTC1155C/LTC1155I TYP MAX MIN TYP MAX 18 4 ...
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ELECTRICAL C HARA TERISTICS C The denotes the specifications which apply over the full operating temperature range, otherwise specifications are 4.5V to 18V, unless otherwise noted. S SYMBOL PARAMETER t Turn OFF Time OFF t Short-Circuit ...
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LTC1155 W U TYPICAL PERFOR A Turn ON Time 1000 C = 1000pF GATE 900 800 700 600 500 400 300 200 100 SUPPLY VOLTAGE (V) 1155 ...
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PIN FUNCTIONS The supply pin of the LTC1155 should not be forced below ground as this may result in permanent damage to the device. A 300 resistor should be inserted in series with the ground pin if ...
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LTC1155 U OPERATIO Gate Charge Pump Gate drive for the power MOSFET is produced by an adaptive charge pump circuit that generates a gate voltage substantially higher than the power supply voltage. The charge pump capacitors are included on-chip and, ...
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PPLICATI S I FOR ATIO For this example, we assume a worst-case scenario; i.e., that the power supply to the power MOSFET is “hard” and provides a constant 5V regardless of the current. In this case, ...
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LTC1155 PPLICATI S I FOR ATIO DS1 IN1 LTC1155 G1 GND GND Figure 3. Using a Speed-Up Diode sense pin and dramatically reducing the amount of time ...
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PPLICATI S I FOR ATIO V = 4.5V TO 18V S C DLY V S DS1 + IN1 LTC1155 100k G1 GND 5V 300 1/4W GND Figure 5. Reverse Battery Protection Overvoltage Protection The MOSFET and ...
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LTC1155 O U TYPICAL A PPLICATI High Side Driver with V Sense Short-Circuit Shutdown DS 4. DS1 5V 1/2 IN1 * LTC1155 G1 GND 0.01 F *ANY 74C OR 74HC LOGIC GATE. MOSFET ...
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O U TYPICAL A PPLICATI Automotive High Side Driver with Reverse-Battery and High Voltage Transient Protection 9V TO 16V + DS1 100k* 1/2 IN1 LTC1155 G1 GND 300 1/4W *PROTECTS TTL/CMOS GATES DURING HIGH VOLTAGE ...
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LTC1155 O U TYPICAL A PPLICATI Logic Controlled Boost Mode Switching Regulator with Short-Circuit Protection and 8 A Standby Current + 100 F FROM P, ETC. IN1 FAULT 1N4148 *COILTRONICS CTX-7-52 12.6VCT 10 110V AC 0.03 MOSFETs ARE SYNCHRONOUSLY ENHANCED ...
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O U TYPICAL A PPLICATI 10k 2 7 – 110V AC 6. LT1006 10k 10 MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA *NO HEATSINK REQUIRED **INTERNAL BODY DIODE OF MOSFET Push-Pull Driver with ...
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LTC1155 U O TYPICAL A PPLICATI Full H-Bridge Driver with Shoot-Through Current Lockout and Stall Current Shutdown (f DIRECTION 74HC02 DISABLE *OPPOSING GATES ARE HELD OFF UNTIL OTHER GATES DROP BELOW 1.5V DC Motor Speed and Torque Control for Cordless ...
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... FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. ...
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... IRFZ24 0.01 F 0.05 100k V DS2 S IRFZ24 G1 IN/OUT G2 24V AC GND 2A MAX EQUIVALENT FUNCTION IN/OUT IN/OUT 2A ON/OFF 1155 TA19 0.07 Switch, 2A Short-Circuit Protected 0.4 /300mA Switches in 8-Lead MSOP Package DS(ON) 1155fa LT/TP 0399 2K REV A • PRINTED IN USA LINEAR TECHNOLOGY CORPORATION 1991 ...