PM8834 STMicroelectronics, PM8834 Datasheet
PM8834
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PM8834 Summary of contents
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... Description PM8834 is a flexible, high-frequency dual low- side driver specifically designed to work with high capacitive MOSFETs and IGBTs. Both PM8834 outputs can sink and source 4 A independently. Higher driving current can be obtained by putting in parallel the two PWM output. PM8834 provides two enable pins which can be used to enable the operation of one or both of the output lines ...
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... Output stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.3 Parallel output operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.4 Gate driver voltage flexibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Design guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1 Output series resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2 Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 Layout guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 PWM inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Enable pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Doc ID 15086 Rev 2 PM8834 ...
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... PM8834 1 Typical application circuit and block diagram 1.1 Block diagram Figure 1. Block diagram Typical application circuit and block diagram Doc ID 15086 Rev 2 3/18 ...
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... MOSFET. IGBT are supported as well. A small series resistor can be useful to reduce dissipated power. PM8834 supply voltage. Bypass with low-ESR MLCC capacitor to GND. Driver1 output. The output stage is capable of providing drive current to the gate of a power MOSFET. IGBT are supported as well. ...
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... PM8834 2.2 Thermal data Table 3. Thermal data Symbol Thermal resistance junction to ambient R thJA (Device soldered on 2s2p PC board - mm) R Thermal resistance junction to case thJC T Maximum junction temperature MAX T Storage temperature range STG T Junction temperature range J T Operating ambient temperature range A Maximum power dissipation at 25 °C ...
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... VCC = GND = 2.5 nF OUT VCC = GND = 14 nF OUT VCC = GND = 2.5 nF OUT VCC = GND = 14 nF OUT C to GND = 2.5 nF OUT C to GND = 2.5 nF OUT Doc ID 15086 Rev 2 PM8834 Min. Typ. Max. Unit 3.5 mA 4.4 4.6 V 3.6 3.8 V 2.2 2.5 V 0.8 1.1 V Ω ...
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... VCC. 4.1 Input stage 4.1.1 PWM inputs The input of the PM8834 dual low side driver are compatible to CMOS/TTL levels with capability to be pulled up to VCC. The relation between the input pins (PWM_1, PWM_2) and the corresponding PWM output is depicted in Figure voltage and value below 0 ...
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... GND. 4.2 Output stage The output stage of the PM8834 make use of ST proprietary lateral DMOS as depicted in Figure 1. Both N-DMOS and P-DMOS have been sized to exhibit high driving peak current as well as low ON-resistance: typical peak current while output resistances are 1 Ω ...
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... Figure 4. Single high current ( low-side driver configuration 4.4 Gate driver voltage flexibility PM8834 allows the user to freely-select the gate drive voltage in order to optimize the efficiency of the application. The low-side MOSFET driving voltage depends on the voltage applied to VCC and can range between ...
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... R G Figure synthetic view of the boundaries for safe operations of PM8834. Figure 5. Output series resistance 10/18 Doc ID 15086 Rev 2 PM8834 Section 5 ...
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... PM8834 5.2 Power dissipation PM8834 embeds two high current low side drivers that can be used to drive high capacitive MOSFETs. This section estimates the power dissipated inside the device in normal applications. Two main terms contribute in the device power dissipation: bias power and drivers' power. ...
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... To improve heat dissipation, place copper area under the IC. This copper area may be connected with other layers (if available) through VIAs to improve the thermal conductivity. 12/18 Figure 8. Power dissipation estimation (single channel) for capacitive load with 4.7 Ω gate resistor Doc ID 15086 Rev 2 PM8834 ...
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... PM8834 The combination of copper pad, copper plane and VIAs under the driver allows the device to reach its best thermal performances. Figure 9. Driver turn-on and turn-off paths Figure 10. External components placement examplefor SO8 package Figure 11. External components placement example for DFN package ...
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... Package mechanical data 6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 14/18 Doc ID 15086 Rev 2 PM8834 ® ...
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... PM8834 Table 6. VFDFPN8 mechanical data DIMENSIONS mm REF. MIN. TYP. MAX. MIN. A 0.80 0.90 A1 0.02 A2 0.55 0.65 A3 0.20 b 0.18 0.25 D 2.85 3.00 D2 2.20 E 2.85 3.00 E2 1.40 e 0.50 L 0.30 0.40 ddd mils TYP. MAX. 1.00 31.49 35.43 39.37 0.05 0.787 1.968 0.80 21.65 25 ...
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... Min Typ Max 1.75 0.25 1.65 0.51 0.25 4.80 5 .00 4.00 6.20 0.50 1.27 0˚ (min.), 8˚ (max.) .10 Doc ID 15086 Rev 2 PM8834 inch Min Typ Max 0.053 0.069 0.004 0.010 0.043 0.065 0.013 0.020 0.007 0.010 0.189 0.197 0.15 0.157 0.050 ...
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... PM8834 7 Revision history Table 8. Document revision history Date 13-Oct-2008 21-Oct-2009 Revision 1 Initial release. 2 Updated Figure 1, Table Doc ID 15086 Rev 2 Revision history Changes 2, Table 5 and Section 4.1.2 17/18 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 18/18 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15086 Rev 2 PM8834 ...