ADP3110AKCPZ-RL ON Semiconductor, ADP3110AKCPZ-RL Datasheet - Page 3

IC MOSFET DRIVER DUAL 12V 8-DFN

ADP3110AKCPZ-RL

Manufacturer Part Number
ADP3110AKCPZ-RL
Description
IC MOSFET DRIVER DUAL 12V 8-DFN
Manufacturer
ON Semiconductor
Type
High Side/Low Sider
Datasheet

Specifications of ADP3110AKCPZ-RL

Configuration
High and Low Side, Synchronous
Input Type
PWM
Delay Time
45ns
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
35V
Voltage - Supply
4.6 V ~ 13.2 V
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-TDFN Exposed Pad
Product
MOSFET Gate Drivers
Rise Time
55 ns
Fall Time
45 ns
Propagation Delay Time
45 ns
Supply Voltage (max)
13.2 V
Supply Voltage (min)
4.15 V
Supply Current
5 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
0 C
Number Of Drivers
2
Output Current
0.7 mA
Output Voltage
35 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Peak
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ADP3110AKCPZ-RL
Manufacturer:
ON Semiconductor
Quantity:
500
Part Number:
ADP3110AKCPZ-RL
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
ADP3110AKCPZ-RL
Quantity:
200
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Internally limited by thermal shutdown, 150°C min.
2. 2 layer board, 1 in
3. 60−180 seconds minimum above 237°C.
NOTE:
NOTE:
MAXIMUM RATINGS
MAXIMUM RATINGS
Operating Ambient Temperature, T
Operating Junction Temperature, T
Package Thermal Resistance: SO−8
Package Thermal Resistance: DFN8 (Note 2)
Storage Temperature Range, T
Lead Temperature Soldering (10 sec): Reflow (SMD styles only)
JEDEC Moisture Sensitivity Level
Junction−to−Case, R
Junction−to−Ambient, R
Junction−to−Case, R
Junction−to−Ambient, R
Pin Symbol
This device is ESD sensitive. Use standard ESD precautions when handling.
All voltages are with respect to PGND except where noted.
PGND
DRVH
DRVL
BST
V
SW
OD
IN
CC
2
Cu, 1 oz thickness.
qJC
qJC
qJA
qJA
(From die to exposed pad)
(2−Layer Board)
S
Bootstrap Supply Voltage Input
DRVH and DRVL Control Input
Main Supply Voltage Input
(Bootstrap Supply Return)
A
J
High−Side Driver Output
Low−Side Driver Output
(Note 1)
Switching Node
Output Disable
Pin Name
Ground
Rating
http://onsemi.com
3
40 V < 50 ns wrt/PGND
35 V wrt/PGND
40 V < 50 ns
15 V wrt/SW
BST + 0.3 V
V
CC
SO−8 (260 peak profile)
V
6.5 V
6.5 V
15 V
35 V
0 V
MAX
+ 0.3 V
Pb−Free (Note 3)
− 2.0 V < 200 ns wrt/SW
−5.0 V < 200 ns
−10 V < 200 ns
−65 to 150
−0.3 V wrt/SW
−0.3 V wrt/SW
260 peak
0 to 150
0 to 85
−0.3 V DC
Value
123
7.5
45
55
−0.3 V
−5.0 V
−0.3 V
−0.3 V
1
V
0 V
MIN
°C/W
°C/W
°C/W
°C/W
Unit
°C
°C
°C
°C

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