VND1NV04TR-E STMicroelectronics, VND1NV04TR-E Datasheet - Page 22

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VND1NV04TR-E

Manufacturer Part Number
VND1NV04TR-E
Description
IC PWR MOSFET 40V 1.7A DPAK
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VND1NV04TR-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
250 mOhm
Current - Peak Output
1.7A
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Switch Type
Low Side
Power Switch Family
VND1NV04
Power Switch On Resistance
250mOhm
Output Current
1.7A
Mounting
Surface Mount
Supply Current
100uA
Package Type
TO-252
Pin Count
2 +Tab
Power Dissipation
35W
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
55V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant

Available stocks

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Part Number
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Quantity
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Part Number:
VND1NV04TR-E
Manufacturer:
ST
0
Package and PCB thermal data
4.3
22/33
SO-8 thermal data
Figure 38. SO-8 PC board
1. Layout condition of R
Figure 39. SO-8 R
Cu thickness=35 µm , Copper areas: from minimum pad layout to 2 cm
105
95
85
75
65
0
footprint
th
thj-amb
and Z
PCB Cu heat sink area ( cm^ 2) - ( refer t o PCB layout )
0,5
th
vs. PCB copper area in open box free air condition
measurements (PCB FR4 area = 58 mm x 58 mm,PCB thickness = 2 mm,
Doc ID 7381 Rev 2
1
VND1NV04 - VNN1NV04 - VNS1NV04
1,5
2
).
2
2,5

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