VND1NV04TR-E STMicroelectronics, VND1NV04TR-E Datasheet - Page 22

• Manufacturer Part Number: VND1NV04TR-E
• Description: IC PWR MOSFET 40V 1.7A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND1NV04TR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Switch Type: Low Side
• Power Switch Family: VND1NV04
• Power Switch On Resistance: 250mOhm
• Output Current: 1.7A
• Mounting: Surface Mount
• Supply Current: 100uA
• Package Type: TO-252
• Pin Count: 2 +Tab
• Power Dissipation: 35W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Package and PCB thermal data
4.3
22/33
SO-8 thermal data
Figure 38. SO-8 PC board
1. Layout condition of R
Figure 39. SO-8 R
Cu thickness=35 µm , Copper areas: from minimum pad layout to 2 cm
105
95
85
75
65
0
footprint
th
thj-amb
and Z
PCB Cu heat sink area ( cm^ 2) - ( refer t o PCB layout )
0,5
th
vs. PCB copper area in open box free air condition
measurements (PCB FR4 area = 58 mm x 58 mm,PCB thickness = 2 mm,
Doc ID 7381 Rev 2
1
VND1NV04 - VNN1NV04 - VNS1NV04
1,5
2
).
2
2,5