VND1NV04TR-E STMicroelectronics, VND1NV04TR-E Datasheet - Page 7

• Manufacturer Part Number: VND1NV04TR-E
• Description: IC PWR MOSFET 40V 1.7A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND1NV04TR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Switch Type: Low Side
• Power Switch Family: VND1NV04
• Power Switch On Resistance: 250mOhm
• Output Current: 1.7A
• Mounting: Surface Mount
• Supply Current: 100uA
• Package Type: TO-252
• Pin Count: 2 +Tab
• Power Dissipation: 35W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VND1NV04 - VNN1NV04 - VNS1NV04
2.2
2.3
Thermal data
Table 3.
1. When mounted on a standard single-sided FR4 board with 50 mm
Electrical characteristics
Table 4.
R
R
R
Off (-40 °C<Tj<150 °C, unless otherwise specified)
On (-40 °C<Tj<150 °C, unless otherwise specified)
Dynamic (T
Switching
Symbol
V
R
thj-case
thj-lead
thj-amb
V
Symbol
V
V
g
C
CLAMP
I
DS(on)
to all DRAIN pins
I
CLTH
DSS
fs
INTH
INCL
ISS
OSS
(1)
Drain-source clamp
voltage
Drain-source clamp
threshold voltage
Input threshold
voltage
Supply current from
input pin
Input-source clamp
voltage
Zero input voltage
drain current
(V
Static drain-source on
resistance
Forward
transconductance
Output capacitance
j
(T
=25 °C, unless otherwise specified)
IN
Thermal data
Thermal resistance junction-case
Thermal resistance junction-lead
Thermal resistance junction-ambient
Electrical characteristics
j
=0 V)
=25 °C, unless otherwise specified)
Parameter
Parameter
Doc ID 7381 Rev 2
V
V
V
V
I
I
V
V
V
V
V
V
IN
IN
IN
IN
DS
DS
DS
DS
IN
IN
DD
DS
=1 mA
=-1 mA
=0 V; I
=0 V; I
=5 V; I
=5 V; I
=V
=0 V; V
=13 V; V
=25 V; V
=13 V; f=1 MHz; V
=13 V; I
IN
; I
Test conditions
D
D
D
D
D
=0.5 A
=2 mA
=0.5 A; T
=0.5 A
IN
=1 mA
D
IN
IN
=0.5 A
=5 V
=0 V; T
=0 V
j
=25 °C
j
=25 °C
IN
=0 V
SOT-223
2
of Cu (at least 35 μm thick) connected
70
18
(1)
Max value
Min
-1.0
0.5
Electrical specifications
40
36
6
SO-8
65
15
(1)
Typ
100
6.8
45
90
2
DPAK
54
3.5
Max
(1)
150
-0.3
250
500
2.5
55
30
75
8
°C/W
°C/W
°C/W
Unit
Unit
mΩ
µA
µA
pF
V
V
V
V
S
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