VND1NV04TR-E STMicroelectronics, VND1NV04TR-E Datasheet - Page 8

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VND1NV04TR-E

Manufacturer Part Number
VND1NV04TR-E
Description
IC PWR MOSFET 40V 1.7A DPAK
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VND1NV04TR-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
250 mOhm
Current - Peak Output
1.7A
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Switch Type
Low Side
Power Switch Family
VND1NV04
Power Switch On Resistance
250mOhm
Output Current
1.7A
Mounting
Surface Mount
Supply Current
100uA
Package Type
TO-252
Pin Count
2 +Tab
Power Dissipation
35W
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
55V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant

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Part Number:
VND1NV04TR-E
Manufacturer:
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0
Electrical specifications
8/33
Table 4.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Source drain diode (T
Protections (-40 °C<T
Symbol
(dI/dt)
V
t
t
t
t
I
t
T
d(on)
d(off)
d(on)
d(off)
RRM
SD
T
E
Q
I
dlim
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
f
r
f
rr
i
(1)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
Drain current limit
Step response
current limit
Over temperature
shutdown
Over temperature
reset
Fault sink current
Single pulse
avalanche energy
Electrical characteristics (continued)
Parameter
j
j
<150 °C, unless otherwise specified)
=25 °C, unless otherwise specified)
Doc ID 7381 Rev 2
V
V
(see
V
V
(see
V
V
V
I
I
I
V
(see
V
V
V
Starting T
V
L=50 mH
(see
gen
SD
SD
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=0.5 A; V
=0.5 A; dI/dt=6 A/µs
=5 V; V
=5 V; V
=5 V; V
=5 V R
=2.13 mA (see
=15 V; I
=15 V; I
=15 V; I
=12 V; I
=30 V; L=200 µH
=5 V; R
=5 V; R
=5 V; R
Figure
Figure
Figure
Figure 6
Test conditions
j
=25 °C; V
gen
DS
DS
DS
D
D
D
D
gen
4)
gen
4)
gen
5)
IN
=0.5 A
=0.5 A
=1.5 A
=0.5 A; V
=13 V
=13 V
=13 V; T
=R
and
=0 V
=R
=2.2 KΩ
=R
IN MIN
IN MIN
IN MIN
Figure
Figure
DD
j
=330 Ω;
=T
IN
=24 V
VND1NV04 - VNN1NV04 - VNS1NV04
=330 Ω
=330 Ω
=5 V
jsh
8)
7)
Min
150
135
1.7
10
55
0.25
Typ
170
350
200
205
100
175
1.3
1.8
1.2
0.8
0.7
2.0
70
15
5
5
1000
Max
200
500
600
200
1.0
5.5
4.0
4.0
3.5
20
A/µs
Unit
mA
nC
mJ
nC
ns
ns
ns
ns
µs
µs
µs
µs
ns
µs
°C
°C
V
A
A

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