VND1NV04TR-E STMicroelectronics, VND1NV04TR-E Datasheet - Page 8

• Manufacturer Part Number: VND1NV04TR-E
• Description: IC PWR MOSFET 40V 1.7A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND1NV04TR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Switch Type: Low Side
• Power Switch Family: VND1NV04
• Power Switch On Resistance: 250mOhm
• Output Current: 1.7A
• Mounting: Surface Mount
• Supply Current: 100uA
• Package Type: TO-252
• Pin Count: 2 +Tab
• Power Dissipation: 35W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Electrical specifications
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Table 4.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Source drain diode (T
Protections (-40 °C<T
Symbol
(dI/dt)
V
t
t
t
t
I
t
T
d(on)
d(off)
d(on)
d(off)
RRM
SD
T
E
Q
I
dlim
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
f
r
f
rr
i
(1)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
Drain current limit
Step response
current limit
Over temperature
shutdown
Over temperature
reset
Fault sink current
Single pulse
avalanche energy
Electrical characteristics (continued)
Parameter
j
j
<150 °C, unless otherwise specified)
=25 °C, unless otherwise specified)
Doc ID 7381 Rev 2
V
V
(see
V
V
(see
V
V
V
I
I
I
V
(see
V
V
V
Starting T
V
L=50 mH
(see
gen
SD
SD
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=0.5 A; V
=0.5 A; dI/dt=6 A/µs
=5 V; V
=5 V; V
=5 V; V
=5 V R
=2.13 mA (see
=15 V; I
=15 V; I
=15 V; I
=12 V; I
=30 V; L=200 µH
=5 V; R
=5 V; R
=5 V; R
Figure
Figure
Figure
Figure 6
Test conditions
j
=25 °C; V
gen
DS
DS
DS
D
D
D
D
gen
4)
gen
4)
gen
5)
IN
=0.5 A
=0.5 A
=1.5 A
=0.5 A; V
=13 V
=13 V
=13 V; T
=R
and
=0 V
=R
=2.2 KΩ
=R
IN MIN
IN MIN
IN MIN
Figure
Figure
DD
j
=330 Ω;
=T
IN
=24 V
VND1NV04 - VNN1NV04 - VNS1NV04
=330 Ω
=330 Ω
=5 V
jsh
8)
7)
Min
150
135
1.7
10
55
0.25
Typ
170
350
200
205
100
175
1.3
1.8
1.2
0.8
0.7
2.0
70
15
5
5
1000
Max
200
500
600
200
1.0
5.5
4.0
4.0
3.5
20
A/µs
Unit
mA
nC
mJ
nC
ns
ns
ns
ns
µs
µs
µs
µs
ns
µs
°C
°C
V
A
A