VNS1NV04DP-E STMicroelectronics, VNS1NV04DP-E Datasheet - Page 14

• Manufacturer Part Number: VNS1NV04DP-E
• Description: MOSFET N-CH 40V 1.7A 8SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04DP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Electrical specifications
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Figure 21. Turn-off drain-source voltage
Figure 23. Switching time resistive load
Figure 25. Output characteristics
ID(A)
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
t(us)
1.75
1.25
0.75
0.25
1.5
0.5
2
0
1
dv/dt(V/us)
350
300
250
200
150
100
50
2
0
1
0
0
0
0
1
250
Vdd=15V
Id=0.5A
Vin=5V
2
500
500
slope (part 2/2)
(part 1/2)
3
750 1000 1250 1500 1750 2000 2250 2500
4
1000
5
Rg(ohm)
Rg(ohm)
VDS(V)
6
1500
7
td(off)
Vin=3.5V
Vdd=15V
Id=0.5A
8
Doc ID 17344 Rev 2
2000
Vin=4.5V
Vin=5.5V
Vin=3.5V
9
tr
td(on)
10
tf
Vin=3V
11
2500
12
Figure 22. Capacitance variations
Figure 24. Switching time resistive load
Figure 26. Normalized on resistance vs
t(ns)
550
500
450
400
350
300
250
200
150
100
Rds(on) (mOhm)
2.25
1.75
1.25
0.75
1.5
0.5
50
C(pF)
225
200
175
150
125
100
0
2
75
50
1
3.25
-50
0
-25
3.5
td(on)
5
Id=0.5A
Vin=5V
tr
(part 2/2)
temperature
3.75
0
10
25
4
15
Vin(V)
50
Tc (ºC)
Vds(V)
4.25
75
20
4.5
Rg=330ohm
VNS1NV04DP-E
100
Vdd=15V
Id=0.5A
25
4.75
f=1MHz
Vin=0V
td(off)
125
tf
30
5
150
5.25
35
175