VN5E160MS-E STMicroelectronics, VN5E160MS-E Datasheet - Page 17
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VN5E160MS-E
Manufacturer Part Number
VN5E160MS-E
Description
IC DVR SWITCH HI SIDE SGL 8SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet
1.VN5E160MSTR-E.pdf
(35 pages)
Specifications of VN5E160MS-E
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
160 mOhm
Current - Peak Output
10A
Voltage - Supply
4.5 V ~ 28 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
VN5E160MS-E
Table 11.
Table 12.
1. The above test levels must be considered referred to V
2. Valid in case of external load dump clamp: 40 V maximum referred to ground.
Table 13.
ISO 7637-2:
ISO 7637-2:
Test pulse
Test pulse
2004(E)
2004(E)
Class
5b
5b
2a
3a
3b
2a
3a
3b
C
E
1
4
1
4
(2)
(2)
Electrical transient requirements (part 1)
Electrical transient requirements (part 2)
Electrical transient requirements (part 3)
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to
disturbance and cannot be returned to proper operation without replacing the device.
-100 V
+37 V
+75 V
+65 V
-75 V
-6 V
III
Test levels
Doc ID 15730 Rev 2
+100 V
-100 V
-150 V
+50 V
+87 V
(1)
-7 V
IV
III
C
C
C
C
C
C
Number of
test times
pulses or
1 pulse
1 pulse
pulses
pulses
Test level results
5000
5000
1h
1h
CC
Contents
= 13.5 V except for pulse 5b
90 ms
90 ms
Burst cycle/pulse
0.5 s
0.2 s
repetition time
(1)
Electrical specifications
100 ms
100 ms
5 s
5 s
IV
C
C
C
C
C
C
0.1 µs, 50 Ω
0.1 µs, 50 Ω
400 ms, 2 Ω
Delays and
Impedance
2 ms, 10 Ω
50 µs, 2 Ω
100 ms,
0.01 Ω
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