VND5160JTR-65-E STMicroelectronics, VND5160JTR-65-E Datasheet - Page 23

• Manufacturer Part Number: VND5160JTR-65-E
• Description: IC DRVR HISIDE 2CH POWERSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND5160JTR-65-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 160 mOhm
• Current - Peak Output: 5A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VND5160AJ-E
3.4
Note:
Maximum demagnetization energy (V
Figure 27. Maximum turn-Off current versus inductance (for each channel)
Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves A and B.
0,1
10
V
1
IN
0,1
A: T
B: T
C: T
, I
L
jstart
jstart
jstart
= 150°C single pulse
= 100°C repetitive pulse
= 125°C repetitive pulse
C
A
Demagnetization
B
L
jstart
= 0 Ω.
1
(at beginning of each demagnetization) of every pulse
L (mH)
Demagnetization
CC
10
= 13.5V)
Application information
Demagnetization
100
23/31
t