VND5160J-E STMicroelectronics, VND5160J-E Datasheet
VND5160J-E
Specifications of VND5160J-E
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VND5160J-E Summary of contents
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... S Application ■ All types of resistive, inductive and capacitive loads Description The VND5160J monolithic device made using STMicroelectronics VIPower M0-5 technology intended for driving resistive or inductive loads with one side connected to ground. Active V device against low energy spikes (see ISO7637 transient compatibility table). ...
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... Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.1 PowerSSO-12™ thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5.1 ECOPACK 5.2 PowerSSO-12™ package information . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5.3 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 2/31 Solution 1 : resistor in the ground line (RGND only Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . 21 ® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 VND5160J-E ...
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... VND5160J-E List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 3. Suggested connections for unused and N.C. pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 4. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 5. Thermal data Table 6. Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 7. Switching (VCC = 13V 25° Table 8. Status pin (V = Table 9. Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 10. Openload detection Table 11. ...
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... PowerSSO-12™ Thermal impedance junction ambient single pulse (one channel ON Figure 34. Thermal fitting model of a double channel HSD in PowerSSO-12™ Figure 35. PowerSSO-12™ package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 36. PowerSSO-12™ tube shipment (no suffix Figure 37. PowerSSO-12™ tape and reel shipment (suffix “TR” 4/ case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 CC VND5160J-E ...
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... VND5160J-E 1 Block diagram and pin description Figure 1. Block diagram GND INPUT1 STATUS1 STAT_DIS INPUT2 STATUS2 OVERTEMP. 1 OVERTEMP. 2 Table 2. Pin functions Name V CC OUTPUTn GND INPUTn STATUSn STAT_DIS V CC CLAMP UNDERVOLTAGE CLAMP 1 DRIVER 1 LOGIC I 1 LIM PWR LIM DSLIM OPENLOAD ON 1 OPENLOAD OFF 1 ...
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... Suggested connections for unused and N.C. pins Connection / Pin Floating To ground 1. Not recommended. 6/31 GND 1 STAT_DIS 2 INPUT 1 3 STATUS STATUS 2 6 INPUT 2 STATUS N.C. OUTPUT X X (1) N.R. X VND5160J-E TAB = OUTPUT OUTPUT 1 9 OUTPUT 2 8 OUTPUT INPUT STAT_DIS X X Through 10kΩ Through 10kΩ N.R. resistor X ...
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... VND5160J-E 2 Electrical specifications Figure 3. Current and voltage conventions V SD Note OUTn CCn 2.1 Absolute maximum ratings Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied ...
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... T Storage temperature stg 2.2 Thermal data Table 5. Thermal data Symbol R Thermal resistance junction-case (max.) (with one channel ON) thj-case R Thermal resistance junction-ambient thj-amb 8/31 Parameter Parameter VND5160J-E Value Unit 4000 V 4000 V 4000 V 5000 V 5000 V 750 V -40 to 150 °C -55 to 150 °C ...
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... VND5160J-E 2.3 Electrical characteristics Values specified in this section are for 8V<V stated. . Table 6. Power section Symbol Parameter V Operating supply voltage CC V Undervoltage shutdown USD Undervoltage Shut-down V USDhyst hysteresis R On state resistance ON V Clamp voltage clamp I Supply current S I L(off1) Off state output current ...
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... Test conditions V = 13V CC 5V<V <36V 13V TSD R T >T j TSD I =1A; V OUT 0.03A; OUT T = -40°C...+150°C j (see Figure VND5160J-E Min. Typ. Max. Unit =0V SD =5V, SD =5V, SD 5.5 -0.7 Min. Typ. Max. 3.5 5 <T < TSD 150 175 135 7 =0; L=20mH ...
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... VND5160J-E Table 10. Openload detection Symbol Openload On state I OL detection threshold Openload On state t DOL(on) detection delay Delay between INPUT falling t edge and STATUS rising POL edge in Openload condition Openload Off state voltage V OL detection threshold Output short circuit DSTKON detection delay at turn Off Table 11 ...
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... V V < V OUT POL I > I OUT OL V > V OUT OL t DSTKON out o T =150 on(T) OPEN LOAD STATUS TIMING (with external pull-up) I < I OUT OL IN STAT t DOL(on) OVER TEMP STATUS TIMING T > TSD STAT t SDL = =- out VND5160J-E V > V OUT OL t SDL ...
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... VND5160J-E Table 12. Truth table Conditions Normal operation Current limitation Overtemperature Undervoltage Output Voltage > V Output Current < the V is high, the STATUS pin high impedance The STATUS pin is low with a delay equal The STATUS pin becomes high with a delay equal to t Figure 6. ...
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... Test level results III Burst cycle/pulse Delays and repetition time 0 0 0.1 µs, 50 Ω 100 ms 0.1 µs, 50 Ω 100 ms 100 ms, 0.01 Ω ( 13.5V except for pulse 5b. Contents VND5160J-E impedance 2 ms, 10 Ω 50 µs, 2 Ω 400 ms, 2 Ω ...
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... VND5160J-E Figure 7. Waveforms INPUT STAT_DIS LOAD CURRENT STATUS V CC INPUT STAT_DIS LOAD CURRENT STATUS INPUT STAT_DIS LOAD VOLTAGE STATUS INPUT STAT_DIS LOAD VOLTAGE LOAD CURRENT STATUS INPUT STAT_DIS LOAD VOLTAGE STATUS T j INPUT STAT_DIS LOAD CURRENT STATUS NORMAL OPERATION UNDERVOLTAGE V USDhyst ...
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... Figure 13. Input hysteresis voltage Vihyst (V) 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 100 125 150 175 -50 VND5160J-E Input clamp voltage I in= 1mA - 100 125 150 Tc (° 100 125 150 Tc (° 100 125 150 Tc (° ...
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... VND5160J-E Figure 14. Status low output voltage Vstat (V) 0.9 0.8 I stat= 1.6mA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 - (°C ) Figure 16. Status clamp voltage Vscl (V) 9 8.5 I stat= 1mA 8 7.5 7 6.5 6 5.5 5 4.5 4 -50 - (°C ) Figure 18. On state resistance vs V Ron (mOhm) ...
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... Figure 23. I Ilimh ( 100 125 150 175 -50 Figure 25. STAT_DIS clamp voltage Vsdcl ( 100 125 150 175 -50 VND5160J-E Vcc= 13V Ri= 6.5Ohm - 100 125 150 Tc (° LIM case Vcc= 13V - 100 125 150 Tc (° sd= 1mA - 100 125 150 Tc (°C ) 175 175 ...
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... VND5160J-E Figure 26. High level STAT_DIS voltage Vsdh ( -50 - (°C ) Figure 27. Low level STAT_DIS voltage Vsdl ( 100 125 150 175 -50 Electrical specifications - 100 125 150 Tc (°C ) 175 19/31 ...
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... STAT_DIS prot R INPUT prot STATUS R prot V GND ). S(on)max ) / (-I ) GND (when V <0: during reverse battery situations) is: GND the input thresholds and the status output S(on)max GND . GND VND5160J OUTPUT GND R GND D GND only) GND resistor. GND becomes the sum of the S(on)max D ld ...
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... VND5160J-E If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below). 3.1.2 Solution 2: a diode (D A resistor (R =1kΩ) should be inserted in parallel to D GND inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (≈ ...
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... OFF when the module standby. The values of V OLmin section. Figure 29. Open load detection in Off state 22/31 out , V and I are available in the Electrical characteristics OLmax L(off2) V batt DRIVER INPUT + LOGIC + R - STATUS V OL GROUND VND5160J-E is pulled high (up to several mA), the pull L(off2) OUT R L ...
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... VND5160J-E 3.5 Maximum demagnetization energy (V Figure 30. Maximum turn Off current versus inductance (for each channel 0,1 0 150°C single pulse jstart 100°C repetitive pulse jstart 125°C repetitive pulse jstart Note: Values are generated with R In case of repetitive pulses, T must not exceed the temperature specified above for curves A and B. ...
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... Cu thickness=70µm (front and back side), Copper areas: from minimum pad lay-out to 8cm Figure 32. R thj-amb ON) RTHj_amb(°C/ 24/31 and Z measurements (PCB: Double layer, Thermal Vias, FR4 vs. PCB copper area in open box free air condition (one channel 2 4 PCB Cu heatsink area (cm^2) VND5160J ...
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... VND5160J-E Figure 33. PowerSSO-12™ Thermal impedance junction ambient single pulse (one channel ON) ZTH (°C/W) 100 10 1 0,1 0,0001 0,001 Pulse calculation formula ⋅ δ THδ TH where δ Figure 34. Thermal fitting model of a double channel HSD in PowerSSO-12™ a. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered ...
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... Package and PCB thermal data Table 14. Thermal parameters Area/island (cm R1=R7 (°C/W) R2=R8 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1=C7 (W.s/°C) C2=C8 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/°C) 26/ Footprint 1 0.0008 0.0016 0.05 0.2 0.27 3 VND5160J 0.1 0.1 0 ...
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... VND5160J-E 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... Table 15. PowerSSO-12™ mechanical data Symbol ddd 28/31 Millimeters Min. Typ. 1.250 0.000 1.100 0.230 0.190 4.800 3.800 0.800 5.800 0.250 0.400 0° 1.900 3.600 VND5160J-E Max. 1.620 0.100 1.650 0.410 0.250 5.000 4.000 6.200 0.500 1.270 8° 2.500 4.200 0.100 ...
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... VND5160J-E 5.3 Packing information Figure 36. PowerSSO-12™ tube shipment (no suffix) A Figure 37. PowerSSO-12™ tape and reel shipment (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter ...
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... R1 and R7 values changed from 1.2 to 0.1 °C/ values changed from 6 to 0.2 °C/W. R3 value changed from °C/W. R4 values changed from 10/10/9 to 8/8/7 °C/W. C1=C7 values changed from 0.0008 to 0.0001 °C/W. C2=C8 values changed from 0.0016 to 0.002 °C/W. VND5160J-E Changes ratings: E entries. MAX :Test level data: ON) ...
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... VND5160J-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...