MX877RTR IXYS, MX877RTR Datasheet - Page 18

• Manufacturer Part Number: MX877RTR
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX877RTR

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 80mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

Symbols and Terms
XV
a
BV
BV
C
C
C
d
d
di/dt, - di/dt Rate of change of current
(di/dt)
di
d
dv/dt
(dv/dt)
E
E
E
E
E
F
g
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
AR
AVM
BO
C(on)
C
C25
C90
CES
CM
D
DD
DD0
D(cont)
D25
DAV
D(AV)M
DM
DRM
D(RMS)
DSS
F
, I
A
S
(mounting)
fs
ies
oes
res
AR
AS
off
on
rec(off)
F
/dt, -di
T
CES
DSS
, C
, C
, C
iss
cr
rss
oss
cr
F
/dt Rate of change of forward current
Acceleration
Collector emitter breakdown voltage
Drain source breakdown voltage
nput capacitance
Output capacitance
Reverse transfer (Miller) capacitance
Duty cycle
Strike distance through air
Critical rate of rise of current
Creep distance on surface
Rate of rise of voltage
Critical rate of rise of voltage
Repetitive avalanche energy
Non-repetitive avalanche energy
Turn-off energy per pulse
Turn-on energy per pulse
Reverse recovery losses at turn-off
Required force to mount hole-less discretes on
heat sink
Forward transconductance
Repetitive avalanche current
Maximum average forward current
Breakover current
Short circuit current
Collector current
Continuous DC collector current at T
Continuous DC collector current at T
Collector emitter leakage current
Maximum pulsed collector current
Drain current
Module supply current, operating mode
Module supply current, standby mode
Continuous drain current
Continuous drain current at T
Average DC output current
Maximum average DC output current
Maximum pulsed drain current
Maximum repetitive off-state current
RMS output current
Drain source leakage current
Forward current
C
= 25°C
C
C
= 25°C
= 90°C
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I²t
I
K
K
K
L
M
P
P
P
P
P
P
P
Q
Q
Q
Q
Q
Q
Q
Q
FM
FAV
F(AV)M
FLT
FRM
F(RMS)
FSM
G
GD
GES
H
IN(H)
IN(L)
ISOL
L
R
RM
RMS
RRM
S
SM
TSM
C
D
GAV
G(AV)M
GM
RSM
T
, I
f
p
T
g
gc
gd
ge
gs
r
RM
S
d
, P
, I
GT
tot
, I
, I
TSM
T(AV)M
T(RMS)
Maximum forward current
Average forward current
Maximum average forward current
Sink current of fault terminal
Maximum repetitive forward current
RMS forward current
Maximum surge forward current
Trigger gate current
Non-trigger gate current
Gate emitter leakage current
Holding current
Signal input current (high level)
Signal input current (low level)
RMS current for isolation test
Latching current
Reverse current
Maximum reverse recovery current
RMS current
Maximum repetitive reverse current
Continuous source current
Maximum pulsed source current
²t value for fusing
Maximum surge on-state current
Characteristic factor
Coeff. for energy per pulse Ep
Temperature coefficient of VBO
Series stray inductance
Mounting torque
Collector power dissipation
Power dissipation
Average gate power dissipation
Maximum average gate power dissipation
Maximum gate power dissipation
Maximum surge reverse power dissipation
Total power dissipation
Total gate charge
Gate collector (Miller) charge
Gate drain (Miller) charge
Gate emitter charge
Gate source charge
Reverse recovery charge
Reverse recovery charge (intrinsic diode)
Recovered charge to RM
(material constant)