MX878RTR IXYS, MX878RTR Datasheet - Page 152

• Manufacturer Part Number: MX878RTR
• Description: IC DVR RELAY/LOAD 8CH 60V 28-QFN
• Manufacturer: IXYS

Specifications of MX878RTR

• Input Type: Parallel/Serial
• Number Of Outputs: 8
• Current - Output / Channel: 200mA
• Voltage - Supply: 6 V ~ 60 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Current - Peak Output: -

Thyristor / Diode Modules
One of the essential advantages of pow-
er semiconductor modules compared to
discrete designs is the electrical isolation
between the baseplate of the module and
the parts subject to voltage (3.6 kV
tested). This makes possible the mount-
down of any number of the same or dif-
ferent modules on a common heatsink. It
is feasible to use standard housings with
appropriate accessories for designing
compact power converter operating from
AC mains up to 690 V.
Plastic Housing with DCB Sub-
strate
IXYS has succeeded in simplifying the
conventional multilayer module con-
struction by the DCB (Direct Copper
Bonding) technique.
Other features are:
• top-side electrical terminals with cap-
• series-connected diode/diode, thyristor/
• easy assembly.
All thyristor modules with DCB ceramic
base contacts are available in volume
with two standardized twin plugs (2.8 mm
x 0.8 mm) for gate and auxiliary cathode
control terminals (version 1). Modules in
TO-240 housing of the version 8 are de-
livered with gate plugs only (without au-
xiliary cathode terminal; mounting srews
available on request). The module hou-
sing is designed for adequate clearance
and creepage distance resulting in
recognition by Underwriters Laboratories,
Inc., USA for all types.
Fig. 2: Principal cross section of an IXYS module with DCB technology
130
tured nuts;
diode and thyristor/thyristor modules;
RMS
New Generation Silicon Chips
The figures 1 a-c show cross sections
of the used thyristor and diode chips in
the passivation area. All chips are de-
signed by applying separation diffusion
processes such that the zones respon-
sible for the surface field strength are
located at the upper chip side. This re-
sults in the capability of soldering the
entire chip area onto the DCB ceramic
substrate without a molybdenum strain
buffer, which in turn leads to good stabi-
lity of the chips as well as to large area
heat dissipation if a load is applied. All
zones at the edges which are decisive
for the blocking stability are coated with
passivation glasses the coefficient of ex-
pansion of which match that of silicon.
Silicon chips increasingly use planar
technology with guard rings and chan-
nel stoppers to reduce electrical surface
fields. This chip design supercedes the
design of thyristor chips which were fa-
bricated with passivation moats so that
modules of the new series designed with
the updated state-of-the-art utilize planar
passivated chips processed by separati-
on diffusion techniques. The contact are-
as of the chips possess physical vapor
deposited metal layers. For the user the
improved properties are:
• Excellent long-term stability of blocking
• increased life time of the internal sol-
• high power cycling capability (> 50 000).
currents and blocking voltages,
dered connections,
Data according to IEC 60747 and refer to a single diode or thyristor unless otherwise stated.
The thyristor/diode chips have been
optimized with regard to their turn-off
parameters: decreasing the carrier life-
time results in reduced stored charges
QS, which in turn significantly reduces
requirements for RC-snubbers for over-
voltage protection. Cost reduction and
improved efficiency are the benefits of
these characteristics. By re-developing
the silicon chips, improvements of the
firing characteristics were achieved by
speci-fying a higher „gate current not to
fire“ IGD resulting in substantially less
suscepibility to misfiring. This leads to
greater safety of operation and higher
reliability of the equipment.
a)
b)
c)
Fig. 1a-c: Cross sections of thyristor
and diode chips in the passivation area
a) glassivated planar thyristor chip
b) glassivated planar diode chip with
c) glassivated planar diode chip, type
Metallisierung
Metallisierung
with separation diffusion, type CWP
separation diffusion, type DWN
DWP (reverse polarity of DWN chips)
Emitter
Metalisation
n
+
Metalisation
Metalisation
n
p
n
n
n
p
n
p
n
p
+
+
+
Feldring Guard ring
Guardring
Glaspassivierung
Glaspassivierung
Glasspassivation
Glasspassivation
Channel stopper
Glasspassivation
n
+
p