VNS1NV04D-E STMicroelectronics, VNS1NV04D-E Datasheet - Page 4

• Manufacturer Part Number: VNS1NV04D-E
• Description: MOSFET 2N-CH 40V 1.7A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VNS1NV04D-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 250 mOhm
• Current - Peak Output: 1.7A
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Switch Type: Low Side
• Power Switch Family: VNS1NV04D
• Power Switch On Resistance: 250mOhm
• Output Current: 2.6A
• Mounting: Surface Mount
• Package Type: SO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 8
• Power Dissipation: 4000W
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 250 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 1.7 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5787-5

VNS1NV04D
ELECTRICAL CHARACTERISTICS (continued) (T
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
(*) Pulsed: Pulse duration = 300 s, duty cycle 1.5%
4/14
2
Symbol
Symbol
(dI/dt)
Symbol
Symbol
V
g
C
t
t
t
t
I
SD
t
T
d(on)
d(off)
d(on)
d(off)
RRM
E
fs
T
Q
I
dlim
OSS
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
r
f
f
rr
(*)
i
(*)
on
Forward
Transconductance
Output Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
Parameter
j
< 150°C, unless otherwise specified)
V
V
V
V
(see figure 1)
V
V
(see figure 1)
V
V
V
I
I
I
V
(see test circuit, figure 2)
V
V
V
starting T
V
(see figures 3 & 4)
gen
SD
SD
DD
DS
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=0.5A; V
=0.5A; dI/dt=6A/ s
=5V; V
=5V; V
=5V; V
=5V R
=13V; f=1MHz; V
=13V; I
=15V; I
=15V; I
=15V; I
=12V; I
=2.13mA (see figure 5)
=30V; L=200 H
=5V; R
=5V; R
=5V; R
j
=25°C; V
gen
DS
DS
DS
Test Conditions
D
Test Conditions
Test Conditions
Test Conditions
D
D
D
D
gen
gen
gen
IN
=0.5A
=0.5A
=0.5A
=1.5A
=0.5A; V
=13V
=13V
=13V; T
=R
=0V
=R
=2.2K
=R
IN MINn
j
IN MINn
IN MINn
=25°C, unless otherwise specified)
DD
j
IN
=T
IN
=24V
=330
=0V
=5V
=330
=330
jsh
L=50mH
Min
Min
Min
Min
150
135
1.7
10
55
Typ
0.25
0.75
Typ
Typ
Typ
170
200
205
100
175
350
0.8
2.0
1.3
1.8
1.2
5.0
5.0
90
70
15
2
1000
Max
Max
Max
Max
200
500
600
200
3.5
1.0
4.0
5.5
4.0
20
Unit
A/ s
Unit
Unit
Unit
mA
pF
mJ
nC
ns
°C
°C
ns
ns
ns
ns
S
V
A
A
C
s
s
s
s
s