VND810MSP-E STMicroelectronics, VND810MSP-E Datasheet - Page 9

• Manufacturer Part Number: VND810MSP-E
• Description: IC DVR HIGH SIDE 2CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND810MSP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 150 mOhm
• Current - Peak Output: 900mA
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Supply Voltage (min): 5.5 V
• Supply Current: 0.012 mA
• Maximum Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 8. Application Schematic
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggest to utilize Solution 2 (see
below).
Solution 2: A diode (D
A resistor (R
D
D
GND
GND
1) R
2) R
= (-V
resistor.
GND
GND
if the device will be driving an inductive load.
CC
GND
PROTECTION
)
2
/R
600mV / I
is the DC reverse ground pin current and can
GND
GND
+5V
V
CC
C
S(on)max
=1k
) / (-I
GND
S(on)max
GND
GND
should be inserted in parallel to
R
R
R
R
* R
) in the ground line.
prot
prot
prot
prot
)
(when V
NETWORK
GND
.
+5V
) in the input thresholds
+5V
S(on)max
CC
<0: during reverse
STATUS1
INPUT1
STATUS2
INPUT2
GND
becomes the
GND
AGAINST
only). This
GND
.
will
V
GND
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected
LOAD DUMP PROTECTION
D
load dump peak voltage exceeds V
The same applies if the device will be subject to
transients on the V
shown in the ISO T/R 7637/1 table.
If a ground protection network is used and negative
transient are present on the V
be pulled negative. ST suggests to insert a resistor (R
in line to prevent the C I/Os pins to latch-up.
The value of these resistors is a compromise between
the leakage current of C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of C I/Os.
Calculation example:
For V
5k
ld
C I/Os PROTECTION:
R
-V
GND
GND
is necessary (Voltage Transient Suppressor) if the
CCpeak
CCpeak
R
prot
V
/I
CC
latchup
= - 100V and I
D
65k .
GND
OUTPUT2
CC
OUTPUT1
R
prot
line that are greater than the ones
latchup
(V
OH C
CC
line, the control pins will
-V
20mA; V
VND810MSP-E
IH
CC
-V
max DC rating.
GND
D
ld
OH C
) / I
IHmax
4.5V
9/20
prot
)