VND830SP-E STMicroelectronics, VND830SP-E Datasheet - Page 16

• Manufacturer Part Number: VND830SP-E
• Description: IC DRIVER HIGH SIDE 2CH PWRSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND830SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 60 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Supply Voltage (min): 5.5 V
• Supply Current: 0.012 mA
• Maximum Power Dissipation: 73500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 9A
• Output Resistance: 0.06ohm
• Input Delay: 30µs
• Output Delay: 30µs
• Supply Voltage Range: 5.5V To 36V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VND830SP-E
Figure 30. PowerSO-10 Thermal Impedance Junction Ambient Single Pulse
Figure 31. Thermal fitting model of a double
channel HSD in PowerSO-10
16/20
1000
Tj_1
Tj_2
0.01
100
Pd1
0.1
10
0.0001
ZTH (°C/W)
1
Pd2
C1
R1
C1
R1
C2
R2
C2
R2
0.001
C3
R3
T_amb
C4
R4
0.01
C5
R5
0.1
C6
R6
Time (s)
Pulse calculation formula
Table 14. Thermal Parameter
Z
1
where
R1 (°C/W)
R2 (°C/W)
R3( °C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
TH
Area/island (cm
=
R
10
TH
=
t
p
+
T
2
Z
)
100
THtp
1 –
Footprint
5.00E-03
0.001
0.05
0.02
0.75
1000
0.3
0.3
0.8
0.3
12
37
3
Footprint
6 cm
22
6
5
2