VNQ5050K-E STMicroelectronics, VNQ5050K-E Datasheet - Page 13
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VNQ5050K-E
Manufacturer Part Number
VNQ5050K-E
Description
IC DRIVER HISIDE QUAD POWERSSO24
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet
1.VNQ5050KTR-E.pdf
(31 pages)
Specifications of VNQ5050K-E
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
50 mOhm
Current - Peak Output
19A
Voltage - Supply
4.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSSO-24
Supply Voltage (min)
4.5 V
Supply Current
14 mA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
40000 ns
Maximum Turn-on Delay Time
15000 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VNQ5050K-E
Manufacturer:
st
Quantity:
5 000
Part Number:
VNQ5050K-E
Manufacturer:
ST
Quantity:
20 000
VNQ5050K-E
Table 12.
1. If the V
2. The STATUS pin is low with a delay equal to t
3. The STATUS pin becomes high with a delay equal to t
Figure 6.
Table 13.
ISO 7637-2:
Output voltage > V
test Pulse
Output current < I
2004(E)
Over temperature
Undervoltage
2a
3a
3b
Conditions
1
SD
V
is high, the STATUS pin is in a high impedance.
INPUT
dV
OUT
Truth table (continued)
Switching characteristics
Electrical transient requirements (part 1/3)
OUT
/dt
-100 V
+37 V
+75 V
-75 V
OL
t
OL
(on)
d(on)
III
Test levels
t
80%
Won
t
r
Doc ID 10864 Rev 6
+100 V
-100 V
-150 V
+50 V
(1)
Input
IV
H
H
H
H
L
L
L
L
10%
DSTKON
Number of
test times
pulses or
pulses
pulses
5000
5000
1h
1h
after INPUT falling edge.
POL
t
d(off)
t
Woff
after INPUT falling edge.
90%
Output
t
f
90 ms
90 ms
H
H
H
L
L
L
L
L
Burst cycle/pulse
0.5 s
0.2 s
repetition time
dV
OUT
/dt
Electrical specifications
(off)
100 ms
100 ms
5 s
5 s
Status (V
t
H
L
t
0.1 μs, 50 Ω
0.1 μs, 50 Ω
Delays and
H
X
X
H
impedance
L
L
(2)
2 ms, 10 Ω
SD
(3)
50 μs, 2 Ω
=0V)
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