VNP35NV04-E STMicroelectronics, VNP35NV04-E Datasheet - Page 5

MOSFET OMNIFETII 40V 30A TO-220

VNP35NV04-E

Manufacturer Part Number
VNP35NV04-E
Description
MOSFET OMNIFETII 40V 30A TO-220
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VNP35NV04-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
13 mOhm
Current - Peak Output
45A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNP35NV04-E
Manufacturer:
ST
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Part Number:
VNP35NV04-E
Manufacturer:
ST
Quantity:
20 000
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 25KHz. The only difference from the user’s
standpoint is that a small DC current I
100 A) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current I
INPUT pin voltages is. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction
overtemperature threshold T
temperature
D
may
jsh
to I
.
lim
whatever the
reach
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
ISS
(typ.
the
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is automatically
restarted when the chip temperature falls of about
15°C below shut-down temperature.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition
(T
current I
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current I
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current I
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
j
> T
jsh
gf
), the device tries to sink a diagnostic
through the INPUT pin in order to
gf
, the INPUT pin will fall to 0V. This
5/19
ISS
.

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