VNQ830E-E STMicroelectronics, VNQ830E-E Datasheet

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VNQ830E-E

Manufacturer Part Number
VNQ830E-E
Description
IC DVR QUAD HIGH SIDE 28SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ830E-E

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
65 mOhm
Current - Peak Output
9A
Voltage - Supply
5.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
*
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNQ830E-E
Manufacturer:
ST
0
Features
1. Per each channel.
Table 1.
May 2010
VNQ830E-E 65 mΩ
Output current: 9.5 A
CMOS compatible inputs
On-state open-load detection
Off-state open-load detection
Output stuck to V
Open drain status outputs
Undervoltage shutdown
Overvoltage clamp
Thermal shutdown
Current and power limitation
Very low standby current
Protection against loss of ground and loss of
V
Reverse battery protection
Very low electromagnetic susceptibility
Optimized electromagnetic emission
Type
CC
Device summary
Package
SO-28
R
DS(on)
(1)
CC
detection
9.5 A
I
OUT
(1)
36 V
V
CC
Doc ID 17459 Rev 1
VNQ830E-E
Tube
Description
The VNQ830E-E is a quad HSD formed by
assembling two VND830E-E chips in the same
SO-28 package. The VND830E-E is a monolithic
device made using STMicroelectronics™
VIPower™ M0-3 technology.
It is intended for driving resistive or inductive
loads with one side connected to ground. Active
V
low energy spikes (see ISO7637 transient
compatibility table).
The device detects open-load condition both in
on-state and off-state. Output shorted to V
detected in the off-state. Output current limitation
protects the device in overload condition. In case
of long duration overload, the device limits the
dissipated power to safe level up to thermal
shutdown intervention. Thermal shutdown with
automatic restart allows the device to recover
normal operation as soon as fault condition
disappears.
CC
Quad channel high-side driver
pin voltage clamp protects the device against
Order codes
SO-28 (double island)
Tape and reel
VNQ830E-E
VNQ830ETR-E
www.st.com
CC
is
1/28
1

Related parts for VNQ830E-E

VNQ830E-E Summary of contents

Page 1

... Quad channel high-side driver Description The VNQ830E quad HSD formed by assembling two VND830E-E chips in the same SO-28 package. The VND830E monolithic device made using STMicroelectronics™ VIPower™ M0-3 technology intended for driving resistive or inductive loads with one side connected to ground. Active ...

Page 2

... VNQ830E-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 18 3.1.1 3.1.2 3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.3 MCU I/O protection ...

Page 3

... Electrical transient requirements on V Table 14. Electrical transient requirements on V Table 15. Electrical transient requirements on V Table 16. Thermal calculation according to the PCB heatsink area . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 17. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Table 18. SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 19. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3/ pin (part pin (part pin (part Doc ID 17459 Rev 1 VNQ830E-E ...

Page 4

... VNQ830E-E List of figures Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Configuration diagram (top view Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 4. Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 5. Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 6. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 7. Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 8. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 9. Input clamp voltage Figure 10. Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 11 ...

Page 5

... VNQ830E-E 1 Block diagram and pin description Figure 1. Block diagram GND1,2 INPUT1 STATUS1 OVERTEMP. 1 INPUT2 STATUS2 OVERTEMP. 2 GND3,4 INPUT3 STATUS3 OVERTEMP. 3 INPUT4 STATUS4 OVERTEMP OVERVOLTAGE CLAMP UNDERVOLTAGE CLAMP 1 DRIVER 1 CURRENT LIMITER 1 LOGIC OPEN-LOAD ON 1 OPEN-LOAD OFF 1 V OVERVOLTAGE cc CLAMP UNDERVOLTAGE CLAMP 3 DRIVER 3 ...

Page 6

... VNQ830E-E Figure 2. Configuration diagram (top view) Table 2. Suggested connections for unused and not connected pins Connection / pin Floating To ground V 1 GND 1,2 INPUT1 STATUS1 STATUS2 INPUT2 V 1 3,4 CC GND 3,4 INPUT3 STATUS3 STATUS4 INPUT4 V 3 Status N. Doc ID 17459 Rev 1 Block diagram and pin description ...

Page 7

... VNQ830E-E 2 Electrical specifications 2.1 Absolute maximum ratings Stressing the device above the rating listed in device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability ...

Page 8

... VNQ830E-E 2.2 Thermal data Table 4. Thermal data (per island) Symbol R Thermal resistance junction-lead per chip thj-lead Thermal resistance junction-ambient R thj-amb (one chip ON) Thermal resistance junction-ambient R thj-amb (two chips ON) 1. When mounted on a standard single-sided FR-4 board with 0 all V pins. Horizontal mounting and no artificial air flow. ...

Page 9

... VNQ830E-E Table 5. Power output (continued) Symbol R On-state resistance ON (1) I Supply current S I Off-state output current L(off1) I Off-state output current L(off2) I Off-state output current L(off3) I Off-state output current L(off4) 1. Per island. Table 6. Switching (per each channel) (V Symbol t Turn-on delay time d(on) t Turn-off delay time ...

Page 10

... VNQ830E-E Table 8. Status pin (per each channel) Symbol V Status low output voltage STAT I Status leakage current LSTAT Status pin input C STAT capacitance V Status clamp voltage SCL Table 9. Protections (per each channel) Symbol T Shutdown temperature TSD T Reset temperature R T Thermal hysteresis hyst ...

Page 11

... VNQ830E-E Table 11. Open-load detection (per each channel) Symbol Open-load on-state detection I OL threshold Open-load on-state detection t DOL(on) delay Open-load off-state voltage V OL detection threshold Open-load detection delay at t DOL(off) turn-off Figure 4. Status timings OPEN -LOAD STATUS TIMING (with external pull-up) V INn ...

Page 12

... VNQ830E-E Table 12. Truth table Conditions Normal operation Current limitation Overtemperature Undervoltage Overvoltage Output voltage > V Output current < I Input Doc ID 17459 Rev 1 Electrical specifications Output Status < TSD X (T > TSD 12/28 ...

Page 13

... VNQ830E-E Table 13. Electrical transient requirements on V ISO T/R 7637/1 Test pulse Table 14. Electrical transient requirements on V ISO T/R 7637/1 Test pulse Table 15. Electrical transient requirements on V Class 100 26 46 66.5 V Test levels results All functions of the device are performed as designed after exposure to disturbance ...

Page 14

... VNQ830E-E Figure 6. Waveforms INPUT n LOAD VOLTAGE STATUS INPUT n LOAD VOLTAGE STATUS V CC INPUT n LOAD VOLTAGE STATUS n INPUT n LOAD VOLTAGE STATUS n INPUT n LOAD VOLTAGE STATUS INPUT n LOAD CURRENT STATUS n NORMAL OPERATION n UNDERVOLTAGE V USDhyst V USD n undefined OVERVOLTAGE V <V V > OPEN-LOAD with external pull-up ...

Page 15

... VNQ830E-E 2.4 Electrical characteristics curves Figure 7. Off-state output current IL(off1) (µA) 0.9 0.8 Off state 0.7 Vcc=13V Vin=Vout=0V 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 - (°C) Figure 9. Input clamp voltage Vicl ( Iin=1mA -50 - (°C) Figure 11. Status low output voltage Vstat (V) 0.8 0.7 Istat=1 ...

Page 16

... VNQ830E-E Figure 13. On-state resistance vs T Ron (mOhm) 160 140 Iout=2A Vcc=8V; 13V & 36V 120 100 -50 - (°C) Figure 15. Open-load on-state detection threshold Iol (mA) 150 140 Vcc=13V 130 Vin=5V 120 110 100 -50 - (°C) Figure 17. Input high level Vih (V) 3.6 3.4 3.2 3 2.8 2 ...

Page 17

... VNQ830E-E Figure 19. Input hysteresis voltage Vhyst (V) 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 - (°C) Figure 21. Turn-on voltage slope dVout/dt(on) (Vms) 800 700 Vcc=13V Rl=6.5Ohm 600 500 400 300 200 100 0 -50 - (°C) Figure 23 LIM case Ilim ( Vcc=13V -50 - (°C) Figure 20. Overvoltage shutdown ...

Page 18

... VNQ830E-E 3 Application information Figure 25. Application schematic +5V μC Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2. 3.1 GND protection network against reverse battery This section provides two solutions for implementing a ground protection network against reverse battery. 3.1.1 Solution 1: a resistor in the ground line (R This can be used with any type of load ...

Page 19

... VNQ830E-E where - I is the DC reverse ground pin current and can be found in the absolute GND maximum rating section of the device’s datasheet. Power dissipation This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I maximum on-state currents of the different devices ...

Page 20

... VNQ830E-E 3.4 Open-load detection in off-state Off-state open-load detection requires an external pull-up resistor (R OUTPUT pin and a positive supply voltage (V microprocessor. The external resistor has to be selected according to the following requirements false open-load indication when load is connected: in this case we have to avoid higher than V ...

Page 21

... VNQ830E-E 3.5 Maximum demagnetization energy Figure 27. Maximum turn-off current versus load inductance A = single pulse repetitive pulse repetitive pulse at T Conditions 13 Note: Values are generated with R In case of repetitive pulses, T must not exceed the temperature specified above for curves B and C. = 150 °C Jstart = 100 ° ...

Page 22

... VNQ830E-E 4 Package and PCB thermal data 4.1 SO-28 thermal data Figure 28. SO-28 PC board Note: Layout condition of R thickness = 2 mm, Cu thickness = 35 µm, Copper areas: 0.5 cm Table 16. Thermal calculation according to the PCB heatsink area Chip 1 Chip 2 On Off thA dchip1 Off thC dchip2 ...

Page 23

... VNQ830E-E Figure 29. R thj-amb RTHj_am b (°C/ Figure 30. SP-28 thermal impedance junction ambient single pulse vs PCB copper area in open box free air condition PCB Cu heatsink area (cm ^2)/island Doc ID 17459 Rev 1 Package and PCB thermal data R thA R thB R thC 23/28 ...

Page 24

... VNQ830E-E Equation 1 pulse calculation formula : ⋅ δ THδ TH δ T ⁄ where = t p Figure 31. Thermal fitting model of a quad channel HSD in SO- Table 17. Thermal parameters Area / island ( R13 = R15 (°C/ R14 = R16 (°C/ C13 = C15 (W.s/° C14 = C16 (W.s/° (W.s/° C10 (W.s/° ...

Page 25

... VNQ830E-E 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Figure 32. SO-28 package dimensions Table 18 ...

Page 26

... VNQ830E-E 5.2 SO-28 packing information Figure 33. SO-28 tube shipment (no suffix) C Figure 34. SO-28 tape and reel shipment (suffix “13TR”) Tape dimensions According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape hole spacing Component spacing Hole diameter Hole diameter ...

Page 27

... VNQ830E-E 6 Revision history Table 19. Document revision history Date 03-May-2010 Revision 1 Initial release. Doc ID 17459 Rev 1 Revision history Changes 27/28 ...

Page 28

... VNQ830E-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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