VNQ830E-E STMicroelectronics, VNQ830E-E Datasheet - Page 8

• Manufacturer Part Number: VNQ830E-E
• Description: IC DVR QUAD HIGH SIDE 28SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ830E-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 65 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VNQ830E-E
2.2
2.3
Thermal data
Table 4.
1. When mounted on a standard single-sided FR-4 board with 0.5 cm
2. When mounted on a standard single-sided FR-4 board with 6 cm
Electrical characteristics
Values specified in this section are for 8 V < V
otherwise stated.
(Per each channel)
Figure 3.
1.
Table 5.
Symbol
V
Symbol
R
R
R
V
V
USD
to all V
all V
V
thj-lead
thj-amb
thj-amb
CC
OV
Fn
(1)
(1)
= V
(1)
CC
CCn
CC
pins. Horizontal mounting and no artificial air flow.
Operating supply voltage
Undervoltage shutdown
Overvoltage shutdown
pins. Horizontal mounting and no artificial air flow.
- V
Thermal resistance junction-lead per chip
Thermal resistance junction-ambient
(one chip ON)
Thermal resistance junction-ambient
(two chips ON)
Thermal data (per island)
Current and voltage conventions
Power output
OUTn
Parameter
during reverse battery condition.
Parameter
Doc ID 17459 Rev 1
Test conditions
CC
< 36 V; -40 °C < T
2
of Cu (at least 35 µm thick) connected to
2
of Cu (at least 35 µm thick) connected
60
46
(1)
(1)
Electrical specifications
j
Value
Min.
< 150 °C, unless
5.5
36
20
3
Typ. Max. Unit
45
30
13
4
(1)
(2)
(2)
5.5
36
°C/W
°C/W
°C/W
Unit
8/28
V
V
V