VNP35N07 STMicroelectronics, VNP35N07 Datasheet

MOSFET N-CH 70V 35A TO-220

VNP35N07

Manufacturer Part Number
VNP35N07
Description
MOSFET N-CH 70V 35A TO-220
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet

Specifications of VNP35N07

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
28 mOhm
Current - Peak Output
35A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Other names
497-2792-5

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DESCRIPTION
The VNP35N07 is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limi-
BLOCK DIAGRAM
March 2004
VNP35N07
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-220 PACKAGE
TYPE
V
70 V
clamp
FULLY AUTOPROTECTED POWER MOSFET
0.028
R
DS(on)
35 A
I
lim
tation and overvoltage clamp protect the chip
in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
TO-220
VNP35N07
"OMNIFET":
1
2
3
1/11

Related parts for VNP35N07

VNP35N07 Summary of contents

Page 1

... DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION The VNP35N07 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS KHz applications. Built-in thermal shut-down, linear current limi- BLOCK DIAGRAM ...

Page 2

... VNP35N07 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage in I Drain Current D I Reverse DC Output Current R V Electrostatic Discharge (C= 100 pF, R=1 esd P Total Dissipation at T tot T Operating Junction Temperature j T Case Operating Temperature c T Storage Temperature stg THERMAL DATA R Thermal Resistance Junction-case ...

Page 3

... di/dt = 100 (see test circuit, figure 5) Test Conditions starting gen VNP35N07 Min. Typ. Max. Unit 100 200 ns 350 600 ns 650 1000 ns 200 350 ns 500 800 ns 2.7 4 4.3 6 100 nC Min. Typ. Max. Unit 1.6 V 250 Min. Typ. Max. Unit 140 s o 150 ...

Page 4

... VNP35N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from KHz. The only difference from the user’s standpoint is that a small DC ...

Page 5

... Thermal Impedance Output Characteristics Static Drain-Source On Resistance vs Input Voltage Derating Curve Transconductance Static Drain-Source On Resistance VNP35N07 5/11 ...

Page 6

... VNP35N07 Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 6/11 Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature ...

Page 7

... Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load VNP35N07 7/11 ...

Page 8

... VNP35N07 Switching Time Resistive Load Step Response Current Limit 8/11 Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics ...

Page 9

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 2: Unclamped Inductive Waveforms Fig. 4: Input Charge Test Circuit Fig. 6: Waveforms VNP35N07 9/11 ...

Page 10

... VNP35N07 DIM L20 L30 P Q Package Weight 10/11 TO-220 MECHANICAL DATA mm. MIN. TYP 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2 ...

Page 11

... STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com VNP35N07 11/11 ...

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