PC357N3TJ00F Sharp Microelectronics, PC357N3TJ00F Datasheet - Page 6
![PHOTOCOUPLER 1CH TRAN OUT 4-SMD](/photos/22/87/228717/970751405-40_sml.jpg)
PC357N3TJ00F
Manufacturer Part Number
PC357N3TJ00F
Description
PHOTOCOUPLER 1CH TRAN OUT 4-SMD
Manufacturer
Sharp Microelectronics
Specifications of PC357N3TJ00F
Number Of Channels
1
Input Type
DC
Voltage - Isolation
3750Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
80V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
200mV
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
4-SMD
No. Of Channels
1
Isolation Voltage
3.75kV
Input Current
20mA
Output Voltage
80V
Opto Case Style
Mini-Flat
No. Of Pins
4
Approval Bodies
UL
Approval Category
UL Recognised
Collector Emitter
RoHS Compliant
Configuration
1
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
200 mV
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 30 C
Forward Current
5 mA
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Transistor
Optocoupler Output Type
Phototransistor
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PC357N3TJ00F
Manufacturer:
IXYS
Quantity:
2 928
Part Number:
PC357N3TJ00F
Manufacturer:
SHARP
Quantity:
20 000
Fig.1 Forward Current vs. Ambient
Fig.3 Collector Power Dissipation vs.
Fig.5 Peak Forward Current vs. Duty Ratio
10 000
Temperature
Ambient Temperature
5 000
2 000
1 000
200
150
100
500
200
100
70
60
50
40
30
20
10
50
50
20
10
0
0
5
−30
−3 0
5
10
− 3
0
2
0
Ambient temperature T
Ambient temperature T
5
25
25
10
Duty ratio
− 2
2
50
50
5
Pulse width≤100µs
T
75
75
a
10
=25˚C
a
a
(˚C)
− 1
(˚C)
2
100
100
5
125
125
1
6
Fig.2 Diode Power Dissipation vs. Ambient
Fig.4 Total Power Dissipation vs. Ambient
Fig.6 Forward Current vs. Forward Voltage
Temperature
Temperature
100
300
250
200
170
150
100
500
200
100
80
70
60
40
20
50
50
20
10
0
5
2
1
−30
0
−3 0
0
0.5
Ta=75˚C
Ambient temperature T
0
Ambient temperature T
0
1.0
50˚C
Forward voltage V
1.5
25
2.0
50 55
50
F
−25˚C
25˚C
PC357N Series
(V)
a
a
0˚C
2.5
Sheet No.: D2-A00101EN
(˚C)
(˚C)
3.0
100
100
3.5