MT4VDDT3264AY-40BF1 Micron Technology Inc, MT4VDDT3264AY-40BF1 Datasheet - Page 4

• Manufacturer Part Number: MT4VDDT3264AY-40BF1
• Description: MODULE DDR 256MB 184-UDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT3264AY-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 200MHz
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 860mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1342

Table 6:
PDF: 09005aef8085081a/Source: 09005aef806e129d
DD4C16_32x64A.fm - Rev. E 11/08 EN
RAS#, CAS#, WE#
DQS0–DQS7
DQ0–DQ63
CK1, CK1#,
DM0–DM7
CK2, CK2#
Vdd/Vddq
BA0, BA1
SA0–SA2
Symbol
A0–A12
VddSPD
CKE0
Pin Descriptions
SDA
Vref
S0#
SCL
Vss
NC
NF
Supply
Supply
Supply
Supply
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
–
–
Description
Address inputs: Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ/WRITE commands, to
select one location out of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE
applies to one device bank (A10 LOW, device bank selected by BA0, BA1) or all
device banks (A10 HIGH). The address inputs also provide the op-code during a
MODE REGISTER SET command. BA0 and BA1 define which mode register
(mode register or extended mode register) is loaded during the LOAD MODE
REGISTER command.
Bank address: BA0 and BA1 define the device bank to which an ACTIVE,
READ, WRITE, or PRECHARGE command is being applied.
Clock: CK and CK# are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and the
negative edge of CK#. Output data (DQ and DQS) is referenced to the
crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW)
deactivates the internal clock, input buffers, and output drivers.
Input data mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write
access. DM is sampled on both edges of DQS. Although DM pins are input-only,
the DM loading is designed to match that of DQ and DQS pins.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command
being entered.
Chip selects: S# enables (registered LOW) and disables (registered HIGH) the
command decoder.
Presence-detect address inputs: These pins are used to configure the SPD
EEPROM address range on the I
Serial clock for SPD EEPROM: SCL is used to synchronize the presence-detect
data transfer to and from the module.
Data input/output: Data bus.
Data strobe: Output with read data, input with write data. DQS is edge-
aligned with read data, center-aligned with write data. Used to capture data.
Serial data: SDA is a bidirectional pin used to transfer addresses and data into
and out of the presence-detect portion of the module.
Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V).
Serial EEPROM positive power supply: +2.3V to +3.6V.
SSTL_2 reference voltage (Vdd/2).
Ground.
No connect: These pins are not connected on the module.
No function: Connected within the module but provides no functionality.
128MB, 256MB (x64, SR) 184-Pin DDR SDRAM UDIMM
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Pin Assignments and Descriptions
2
C bus
©2003 Micron Technology, Inc. All rights reserved.