MT8LSDT3264HG-133D2 Micron Technology Inc, MT8LSDT3264HG-133D2 Datasheet - Page 12

• Manufacturer Part Number: MT8LSDT3264HG-133D2
• Description: MODULE SDRAM 256MB 144SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8LSDT3264HG-133D2

• Memory Type: SDRAM
• Memory Size: 256MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 12: I
Notes: 1, 1, 5, 6, 11, 13; notes appear on page 15; V
NOTE:
Table 13: I
Notes: 1, 1, 5, 6, 11, 13; notes appear on page 15; V
NOTE:
09005aef8077d63a
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
=
STANDBY CURRENT: Power-Down Mode; All device device banks
idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; S# = HIGH
SELF REFRESH CURRENT: CKE
(Low power not available with industrial
temperature option)
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
=
STANDBY CURRENT: Power-Down Mode; All device device banks
idle; CKE = LOW
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; S# = HIGH
SELF REFRESH CURRENT: CKE
(Low power not available with industrial
temperature option)
b. Value calculated reflects all module banks in this operating condition.
b. Value calculated reflects all module banks in this operating condition.
a. Value calculated as one module bank in this operating condition, and all other module banks in power-down mode.
a. Value calculated as one module bank in this operating condition, and all other module banks in power-down mode.
t
t
RC (MIN)
RC (MIN)
DD
DD
Specifications and Conditions – 128MB
Specifications and Conditions – 256MB
t
RCD met; No accesses in progress
0.2V
0.2V
t
t
RFC =
RFC = 7.8125µs
t
t
RFC =
RFC = 15.625µs
Low Power (L)
Low Power (L)
DD
DD
Standard
Standard
t
, V
, V
RFC (MIN)
t
t
RFC (MIN)
RCD met;
DD
DD
Q = +3.3V ±0.3V; DRAM components only
Q = +3.3V ±0.3V; DRAM components only
12
t
t
RC
RC
64MB, 128MB, 256MB (x64, DR)
SYMBOL
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
2
5
6
7
7
1
2
3
4
5
6
7
7
1
3
4
b
b
b
b
b
a
b
a
a
b
b
b
b
a
a
a
144-PIN SDRAM SODIMM
2,280
2,640
-13E
-13E
648
208
668
548
168
548
16
24
16
16
28
20
12
8
MAX
MAX
2,160 2,160
2,480 2,160
-133
-133
608
208
608
508
168
548
16
24
16
16
28
20
12
8
©2004 Micron Technology, Inc. All rights reserved.
-10E
-10E
568
168
568
508
168
548
16
28
20
12
16
24
16
8
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
19, 29, 30
19, 29, 30
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
NOTES
NOTES
29
29
29
29
29
29
29
29
4
4