MT18VDDT6472AY-335K1 Micron Technology Inc, MT18VDDT6472AY-335K1 Datasheet - Page 8
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MT18VDDT6472AY-335K1
Manufacturer Part Number
MT18VDDT6472AY-335K1
Description
MODULE DDR 512MB 167MHZ 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDT6472AY-335K1.pdf
(13 pages)
Specifications of MT18VDDT6472AY-335K1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DRAM Operating Conditions
Table 8:
Design Considerations
Simulations
Power
PDF: 09005aef80814e61/Source: 09005aef807f8acb
DD18C64_128x72A.fm - Rev. D 9/08 EN
Module and Component Speed Grades
DDR components may exceed the listed module speed grades
Module Speed Grade
-26A
Recommended AC operating conditions are given in the DDR component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 8.
-40B
-335
-262
-265
Micron
designed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system’s
memory bus to ensure adequate signal integrity of the entire memory system.
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to
ensure the required supply voltage is maintained.
®
memory modules are designed to optimize signal integrity through carefully
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
Electrical Specifications
-75E
-75Z
-5B
-75
-6
©2004 Micron Technology, Inc. All rights reserved