MT16LSDF6464HY-13ED2 Micron Technology Inc, MT16LSDF6464HY-13ED2 Datasheet - Page 10
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MT16LSDF6464HY-13ED2
Manufacturer Part Number
MT16LSDF6464HY-13ED2
Description
MODULE SDRAM 512MB 144-SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16LSDF6464HY-13ED2.pdf
(22 pages)
Specifications of MT16LSDF6464HY-13ED2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
144-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Mode
M7 and M8 to zero; the other combinations of values
for M7 and M8 are reserved for future use and/or test
modes. The programmed burst length applies to both
READ and WRITE bursts.
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both READ and WRITE bursts; when
M9 = 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
The normal operating mode is selected by setting
Test modes and reserved states should not be used
When M9 = 0, the burst length programmed via M0-
10
Table 8:
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
CL Table
CL = 2
CLOCK FREQUENCY (MHz)
≤ 133
≤ 100
≤ 100
ALLOWABLE OPERATING
©2006 Micron Technology, Inc. All rights reserved.
CL = 3
< 143
< 133
≤ NA