MT18VDDF12872DY-335F1 Micron Technology Inc, MT18VDDF12872DY-335F1 Datasheet - Page 28
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MT18VDDF12872DY-335F1
Manufacturer Part Number
MT18VDDF12872DY-335F1
Description
MODULE DDR SDRAM 1GB 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF12872DY-335F1.pdf
(31 pages)
Specifications of MT18VDDF12872DY-335F1
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 21: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes at end of Serial Presence-Detect Matrix
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
BYTE
36-40 Reserved
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0
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Number of SPD Bytes Used by Micron
Total Number of Bytes In SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time, (
SDRAM Access From Clock (
Module Configuration Type
Refresh Rate/type
SDRAM Device Width (Primary DDR SDRAM)
Error-checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random
Column Access
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time, (
SDRAM Access From Clock (
2.5
SDRAM Cycle Time, (
SDRAM Access From CK , (
Minimum Row Precharge Time, (
Minimum Row Active to Row Active, (
Minimum RAS# to CAS# Delay, (
Minimum RAS# Pulse Width, (
Module Rank Density
Address and Command Setup Time, (
Address and Command Hold Time, (
Data/Data Mask Input Setup Time, (
Data/Data Mask Input Hold Time, (
Min Active Auto Refresh Time (
Minimum Auto Refresh to Active/Auto Refresh
Command Period, (
SDRAM Device Max Cycle Time (
SDRAM Device Max DQS-DQ Skew Time (
DESCRIPTION
t
RFC)
t
t
t
CK) CAS Latency = 3
CK) CAS Latency = 2.5
CK) CAS Latency = 2
t
AC) CAS Latency = 2
t
t
AC) CAS Latency = 3
AC) CAS Latency =
t
RAS), (See note 3)
t
t
RC)
t
RCD)
t
CK
RP)
t
DH)
MAX
t
t
DS)
IH),
t
IS),
t
RRD)
)
t
DQSQ)
Registered, PLL/Diff. Clock
0.7ns (for PC2700 compat.)
6ns (for PC2700 compat.)
0.75ns (PC2100, PC1600)
7.5ns (PC2100, PC1600)
28
512MB, 1GB (x72, ECC, SR) PC3200
ENTRY (VERSION)
Fast / Concurrent
Auto Precharge
512MB or 1GB
SDRAM DDR
0.6ns (-40B)
0.6ns (-40B)
0.4ns (-40B)
0.4ns (-40B)
0.4ns (-40B)
7.81µs/SELF
15ns (-40B)
10ns (-40B)
15ns (-40B)
40ns (-40B)
55ns (-40B)
70ns (-40B)
12ns (-40B)
5ns (-40B)
SSTL 2.5V
0.7 (-40B)
11 or 12
3, 2.5, 2
1 clock
2, 4, 8
128
256
ECC
13
72
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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184-PIN DDR SDRAM RDIMM
MT18VDDF6472
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©2004 Micron Technology, Inc. All rights reserved.
MT18VDDF12872
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