MT16HTS51264HY-667A1 Micron Technology Inc, MT16HTS51264HY-667A1 Datasheet - Page 11
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MT16HTS51264HY-667A1
Manufacturer Part Number
MT16HTS51264HY-667A1
Description
MODULE DDR2 4GB 200-SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16HTS51264HY-667A1.pdf
(14 pages)
Specifications of MT16HTS51264HY-667A1
Memory Type
DDR2 SDRAM
Memory Size
4GB
Speed
667MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
512Mx64
Total Density
4GByte
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.464A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 9: DDR2 I
Values shown for MT47H256M8THJ DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256
Meg x 8) component data sheet
PDF: 09005aef821e5bf3
hts16c256_512x64h.pdf - Rev. E 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
Specifications and Conditions – 2GB (Continued)
DD
),
t
RRD =
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
t
RCD (I
) - 1 ×
DD
11
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol -800
I
DD7
2776
2336
-667
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
2256
-53E
Specifications
-40E
2176
Units
mA