MT16HTF6464AY-667B4 Micron Technology Inc, MT16HTF6464AY-667B4 Datasheet - Page 10
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MT16HTF6464AY-667B4
Manufacturer Part Number
MT16HTF6464AY-667B4
Description
MODULE DDR2 SDRAM 512MB 240-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16HTF6464AY-667B4.pdf
(21 pages)
Specifications of MT16HTF6464AY-667B4
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
333MHz
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1142
Table 8:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
Parameter/Condition
Operating one device bank active-precharge current;
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one device bank active-read-precharge current; I
0mA; BL = 4, CL = CL (I
t
commands; Address bus inputs are switching; Data pattern is same as
I
Precharge power-down current; All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current; All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching;
Data bus inputs are switching
Active power-down current; All device banks open;
=
inputs are stable; Data bus inputs are floating
Active standby current; All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current; All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data bus inputs are switching
Operating burst read current; All device banks open; Continuous burst
reads, I
MAX (I
commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current;
(I
control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating device bank interleave read current; All device banks
interleaving reads, I
t
(I
inputs are stable during DESELECTs; Data bus inputs are switching; See
I
RC =
RAS MIN (I
DD
RAS MAX (I
CK (I
DD
DD
DD
DD
t
CK (I
4W
7 conditions in component data sheet for detail
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
); CKE is HIGH, S# is HIGH between valid commands; Address bus
DD
t
t
RP =
RC (I
DD
OUT
DD
);
),
); CKE is LOW; Other control and address bus
t
CK =
DD
= 0mA; BL = 4, CL = CL (I
DD
t
t
RP (I
RP =
DD
),
),
DDR2 I
Values shown for DDR2 SDRAM components only
),
t
t
t
RAS =
RCD =
CK (I
t
DD
t
RP =
RP (I
); CKE is HIGH, S# is HIGH between valid commands;
Notes:
OUT
DD
DD
t
DD
DD
t
RP (I
t
RAS MIN (I
),
RCD (I
= 0mA; BL = 4, CL = CL (I
t
); CKE is HIGH, S# is HIGH between valid
), AL = 0;
CK =
t
Specifications and Conditions – 1GB
RC =
DD
1. a = Value calculated as one module rank in this operating condition, and all other module
2. b = Value calculated reflects all module ranks in this operating condition.
DD
DD
); CKE is HIGH, S# is HIGH between valid
t
CK (I
t
ranks in I
), AL = 0;
RC (I
); CKE is HIGH, S# is HIGH between valid
DD
t
DD
CK =
DD
); CKE is HIGH, S# is HIGH between
DD
), AL = 0;
); REFRESH command at every
),
t
DD
CK (I
t
t
CK =
RRD =
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
2
P
DD
(CKE LOW).
t
t
CK =
CK (I
),
DD
t
RRD (I
t
t
RC =
CK =
), AL =
DD
t
t
CK =
CK (I
),
t
DD
CK
t
t
t
RC (I
CK (I
RAS =
),
t
DD
t
t
CK =
t
CK (I
RCD (I
t
CK =
t
CK =
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
),
RCD =
10
DD
DD
t
RAS =
DD
t
),
t
),
RAS MAX
CK (I
t
t
DD
CK (I
CK (I
t
t
); CKE is
OUT
RAS =
RAS =
t
) - 1 ×
RCD
t
DD
t
RFC
DD
RAS
DD
=
Micron Technology, Inc., reserves the right to change products or specifications without notice.
);
);
),
Symbol -80E
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
a
a
b
b
a
b
b
b
b
a
b
a
1,120
1,616
1,696
3,680
2,456
856
976
112
800
880
640
192
112
Electrical Specifications
1,040
1,416 1,1176
1,496
2,880
1,976
-667
776
896
112
720
800
560
192
112
©2003 Micron Technology, Inc. All rights reserved.
1,216
2,720
1,856
-53E
696
816
112
640
720
480
192
880
112
2,640
1,816
-40E
696
776
112
560
640
400
192
720
976
976
112
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA