MT18VDDF6472DY-335G2 Micron Technology Inc, MT18VDDF6472DY-335G2 Datasheet - Page 2

• Manufacturer Part Number: MT18VDDF6472DY-335G2
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF6472DY-335G2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 600ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.611A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1:
Table 2:
Table 3:
PDF: 09005aef807eb17d/Source: 09005aef807d24c9
ddf18c64_128x72d.fm - Rev. D 10/08 EN
Parameter
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT18VDDF6472DG-40B__
MT18VDDF6472DY-40B__
MT18VDDF6472DG-335__
MT18VDDF6472DY-335__
MT18VDDF6472DG-265__
Speed
Grade
-40B
-26A
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V32M8,
2
Nomenclature
Notes:
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDF6472DY-335G2.
Module
Density
512MB
512MB
512MB
512MB
512MB
1
256Mb DDR SDRAM
CL = 3
400
–
–
–
–
t
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
RCD and
Configuration
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
Data Rate (MT/s)
CL = 2.5
t
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
266
256Mb (32 Meg x 8)
2
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
1K (A0–A9)
512MB
8K
CL = 2
Bandwidth
266
266
266
266
200
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(ns)
RCD
15
18
15
20
20
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
Data Rate
(ns)
t
15
18
15
20
20
RP
512Mb (64 Meg x 8)
©2004 Micron Technology, Inc. All rights reserved
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
1GB
8K
(ns)
(CL-
t
Clock Cycles
55
60
60
65
65
RC
2.5-3-3
t
3-3-3
3-3-3
3-3-3
3-3-3
RCD-
Features
Notes
t
RP)
1