MT18VDVF12872DY-40BF4 Micron Technology Inc, MT18VDVF12872DY-40BF4 Datasheet - Page 26
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MT18VDVF12872DY-40BF4
Manufacturer Part Number
MT18VDVF12872DY-40BF4
Description
MODULE DDR 1GB 184DIMM VLP
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDVF12872DG-40BD4.pdf
(38 pages)
Specifications of MT18VDVF12872DY-40BF4
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PDF: 09005aef81c73825/Source: 09005aef81c73837
DVF18C64_128x72D_2.fm - Rev. A 8/05 EN
44. I
45. Whenever the operating frequency is altered, not including jitter, the DLL is required
46. Leakage number reflects the worst case leakage possible through the module pin, not
47. When an input signal is HIGH or LOW, it is defined as a steady state logic HIGH or
48. The -335 speed grade will operate with
I
remain stable. Although I
to be reset. This is followed by 200 clock cycles (before READ commands).
what each memory device contributes.
LOW.
at any slower frequency.
DD
DD
2N specifies the DQ, DQS, and DM to be driven to a valid high or low logic level.
2Q is similar to I
DD
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
2F except I
DD
26
2F, I
DD
2N, and I
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2Q specifies the address and control inputs to
t
RAS (MIN) = 40ns and
DD
2Q are similar, I
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
t
DD
RAS (MAX) = 120,000ns
2F is “worst case.”
Notes