MT4VDDT1664AG-40BF3 Micron Technology Inc, MT4VDDT1664AG-40BF3 Datasheet
MT4VDDT1664AG-40BF3
Specifications of MT4VDDT1664AG-40BF3
Related parts for MT4VDDT1664AG-40BF3
MT4VDDT1664AG-40BF3 Summary of contents
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... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 Features 184-Pin UDIMM (MO-206) Marking 1 ≤ +70°C) None A ≤ +85°C) ...
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... Part Number Density MT4VDDT1664AG-40B__ 128MB 128MB MT4VDDT1664AY-40B__ MT4VDDT1664AG-335__ 128MB MT4VDDT1664AY-335__ 128MB MT4VDDT1664AG-262__ 128MB 128MB MT4VDDT1664AG-26A__ 128MB MT4VDDT1664AG-265__ MT4VDDT1664AY-265__ 128MB Table 4: Part Numbers and Timing Parameters – 256MB Modules Base device: MT46V32M16, Module 2 Part Number Density 256MB MT4VDDT3264AG-40B__ 256MB MT4VDDT3264AY-40B__ MT4VDDT3264AG-335__ 256MB ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 24 DQ17 47 2 DQ0 25 DQS2 48 3 Vss 26 Vss 49 4 DQ1 ...
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Table 6: Pin Descriptions Symbol A0–A12 BA0, BA1 CK1, CK1#, CK2, CK2# CKE0 DM0–DM7 RAS#, CAS#, WE# S0# SA0–SA2 SCL DQ0–DQ63 DQS0–DQS7 SDA Vdd/Vddq VddSPD Vref Vss NC NF PDF: 09005aef8085081a/Source: 09005aef806e129d DD4C16_32x64A.fm - Rev. E 11/08 EN 128MB, 256MB ...
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Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 ...
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... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...
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Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...
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Idd Specifications Table 9: Idd Specifications and Conditions – 128MB (Die Revision K) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one ...
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Table 10: Idd Specifications and Conditions – 128MB (All Other Die Revisions) Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16) component data sheet Parameter/Condition Operating one device ...
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Table 11: Idd Specifications and Conditions – 256MB Values are for the MT46V16M16 DDR SDRAM only and are computed from values specified in the 512Mb (32 Meg x 16) component data sheet Parameter/Condition Operating one device bank active-precharge current: t ...
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Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input leakage current: Vin = GND to ...
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Module Dimensions Figure 3: 184-Pin DDR UDIMM 2.0 (0.079 (4X) 2.5 (0.098) D (2X) 2.3 (0.091) TYP 2.2 (0.087) Pin 1 TYP 1.27 (0.05) 1.0 (0.039) TYP Pin 184 49.53 (1.95) Notes: 1. All dimensions are in millimeters ...