MT8VDDT6464AY-40BF3 Micron Technology Inc, MT8VDDT6464AY-40BF3 Datasheet - Page 12

• Manufacturer Part Number: MT8VDDT6464AY-40BF3
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AY-40BF3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 6:
Table 7:
Table 8:
PDF: 09005aef80a43556, Source: 09005aef80a43534
DDA8C16_32_64x64AG_2.fm - Rev. E 4/06 EN
Parameter/Condition
Supply voltage
I/O supply voltage
I/O reference voltage
I/O termination voltage (system)
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current
Any input 0
V
(All other pins not under test = 0V)
Output leakage current
(DQ disabled; 0V ≤ V
Output levels:
High current (V
Low current (V
Input/Output capacitance: DQ, DQS, DM
Input capacitance: command and address, S#, CKE
Input capacitance: CK0, CK0# (standard PCB)
Input capacitance: CK1, CK1#; CK2, CK2# (standard PCB)
REF
Symbol
pin 0
V
V
V
I/O
DD
T
T
REF
DD
A
s
Q
V
≤ V
V
≤ V
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 13; notes appear on pages 16–18; 0°C ≤ T
Capacitance
Note: 11; notes appear on pages 16–18
OUT
OUT
IN
IN
≤ 1.35V
Parameter
V
V
V
I/O voltage relative to V
Operating temperature (ambient)
Storage temperature (plastic)
Short circuit output current
= V
= 0.373V, maximum V
≤ V
DD
DD
REF
OUT
DD
DD
Q voltage relative to V
voltage relative to V
and input voltage relative
Q - 0.373V, minimum V
≤ V
,
DD
Stresses greater than those listed Figure 6 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Parameter
Q)
128MB, 256MB, 512MB (x64, SR): PC3200 184-Pin DDR UDIMM
REF
CMD/ADDR, RAS#,
CAS#, WE#, S#, CKE
CK0, CK0#
CK1/CK1#, CK2/CK2#
DM
DQ, DQS
SS
, maximum V
SS
SS
REF
, minimum V
to
V
SS
TT
)
12
TT
)
Symbol
A
V
V
V
≤ +70°C
V
V
IH
IL
V
I
DD
I
I
OH
OZ
OL
REF
DD
(
I
TT
(
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
DC
DC
Min
–0.5
–55
Q
–1
–1
–1
0
–
)
)
V
V
REF
REF
Symbol
0.49 x
V
–16.8
Min
–0.3
16.8
–16
2.5
2.5
DD
–4
–6
–2
–5
C
C
C
C
+ 0.15 V
- 0.04 V
IO
I
I
I
1
2
3
Q
V
DD
Electrical Specifications
V
REF
Max
Q + 0.5V
REF
150
DD
3.6
3.6
3.6
0.51 x
V
70
50
Max
2.7
2.7
DD
16
+ 0.04
4
6
2
5
–
–
©2005 Micron Technology, Inc. All rights reserved.
- 0.15
+ 0.3
Q
Min
16.0
10.0
4.0
9.0
Units
mA
mA
µA
µA
Max
24.0
12.0
12.0
V
V
V
V
V
V
5.0
19, 22, 23,
19, 22, 31
Units
Notes
mA
20, 21
°C
°C
6, 23
7, 23
V
V
V
V
31
17
29
29
Units
17
pF
pF
pF
pF