MT9VDDF3272Y-40BG3 Micron Technology Inc, MT9VDDF3272Y-40BG3 Datasheet - Page 8

• Manufacturer Part Number: MT9VDDF3272Y-40BG3
• Description: MODULE DDR SDRAM 256MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF3272Y-40BG3

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 7:
PDF: 09005aef8082c948/Source: 09005aef807d56a1
ddf9c32_64x72.fm - Rev. C 10/08 EN
V
V
Symbol
DD
IN
, V
I
/V
T
OZ
I
A
I
DD
OUT
Q
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
DRAM ambient operating temperature
REF
DD
/V
Notes:
input 0V ≤ V
DD
Q supply voltage relative to V
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
1. For further information, refer to technical note
on Micron’s Web site.
IN
≤1.35V (All other pins not under
256MB, 512MB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
OUT
SS
≤ V
SS
DD
1
IN
Q; DQ and
≤ V
DD
8
;
Address inputs, RAS#,
CAS#, WE#, BA, S#,
CKE
CK, CK0
DM
DQ, DQS, DQS#
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal
Electrical Specifications
Min
–0.5
©2002 Micron Technology, Inc. All rights reserved.
–10
–40
–1
–5
–2
–5
0
Applications,” available
Max
+3.6
+3.2
+10
+70
+85
+5
+2
+5
Units
µA
µA
°C
°C
V
V