MT16HTF12864HY-40EB3 Micron Technology Inc, MT16HTF12864HY-40EB3 Datasheet - Page 10
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MT16HTF12864HY-40EB3
Manufacturer Part Number
MT16HTF12864HY-40EB3
Description
MODULE SDRAM DDR2 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT16HTF12864HY-40EB3
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
976mA
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
I
Table 9: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
Parameter
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
4, CL = CL (I
(I
Address bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus in-
puts are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Da-
ta bus inputs are switching
Active power-down current: All device banks open;
=
puts are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
mands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
read, I
MAX (I
mands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
(I
trol and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
DD
RC (I
RAS MAX (I
DD
DD
DD
t
CK (I
),
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other con-
DD
Specifications
t
t
RCD =
RP =
OUT
DD
DD
),
),
t
); CKE is LOW; Other control and address bus in-
RAS =
= 0mA; BL = 4, CL = CL (I
t
t
DD
RP (I
RP =
DD
t
RCD (I
), AL = 0;
),
t
DD
t
t
RP =
RAS MIN (I
RP (I
DD
); CKE is HIGH, S# is HIGH between valid commands;
DD
Specifications and Conditions – 1GB
DD
); CKE is HIGH, S# is HIGH between valid commands;
t
RP (I
t
CK =
t
); CKE is HIGH, S# is HIGH between valid com-
CK =
DD
DD
t
); CKE is HIGH, S# is HIGH between valid com-
DD
CK (I
t
); CKE is HIGH, S# is HIGH between valid
CK (I
), AL = 0;
DD
DD
DD
),
), AL = 0;
); REFRESH command at every
t
RC =
t
CK =
t
RC (I
t
CK =
t
CK (I
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
t
CK =
t
CK =
),
t
t
DD
CK (I
CK =
t
RAS =
),
t
CK
t
CK (I
t
t
RAS =
DD
CK (I
t
OUT
CK =
t
DD4W
t
CK (I
CK =
),
10
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
DD
RAS MIN
t
= 0mA; BL =
DD
RAS =
),
t
DD
t
CK (I
RAS MAX
),
t
t
CK (I
); CKE is
RAS =
t
RC =
t
RFC
t
DD
RAS
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
);
);
Symbol
I
I
I
I
I
I
I
DD4W
I
I
DD2Q
I
I
DD2N
DD3N
DD4R
DD2P
DD3P
DD0
DD1
DD5
DD6
1
1
2
2
2
2
1
2
2
2
1
-80E/
1120
1616
1696
3680
-800
856
976
112
800
880
640
192
112
1040
1416
1496
2880
-667
776
896
112
720
800
560
192
112
© 2004 Micron Technology, Inc. All rights reserved.
I
DD
1176
1216
2720
-53E
Specifications
696
816
112
640
720
480
192
880
112
-40E
2640
696
776
112
560
640
400
192
720
976
976
112
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA